Superconductor-semiconductor hybrid devices are at the heart of several proposed approaches to quantum information processing, but their basic properties remain to be understood. We embed a two-dimensional Al-InAs hybrid system in a resonant microwave circuit, probing the breakdown of superconductivity due to an applied magnetic field. We find a strong fingerprint from the two-component nature of the hybrid system, and quantitatively compare with a theory that includes the contribution of intraband p±ip pairing in the InAs, as well as the emergence of Bogoliubov-Fermi surfaces due to magnetic field. Separately resolving the Al and InAs contributions allows us to determine the carrier density and mobility in the InAs.
@article{arxiv.2107.03695,
title = {Detecting induced $p \pm ip$ pairing at the Al-InAs interface with a quantum microwave circuit},
author = {D. Phan and J. Senior and A. Ghazaryan and M. Hatefipour and W. M. Strickland and J. Shabani and M. Serbyn and A. P. Higginbotham},
journal= {arXiv preprint arXiv:2107.03695},
year = {2022}
}