English

Chiral topological superconductivity in hole-doped Sn/Si(111)

Superconductivity 2025-12-17 v1 Strongly Correlated Electrons

Abstract

A third monolayer of tin atoms on the semiconductor substrate Si(111) has been shown to become superconducting upon six to ten percent hole doping. Experiments have reported promising results hinting at a superconducting chiral dd-wave order parameter. Here we examine Sn/Si(111) by combining most recent ab initio results, quasi-particle interference calculations, state-of-the-art truncated-unity functional renormalization group simulations and Bogoliubov-de Gennes analysis. We show remarkable agreement between experimental and theoretical quasi-particle interference data both in the metallic and superconducting regimes. The interacting phase diagram reveals that the superconductivity is indeed chiral dd-wave with Chern number C=4C=4. Surprisingly, magnetically ordered phases are absent, instead we find charge density wave order, as observed in related compounds, as a competing phase. Our results demonstrate that Sn/Si(111) is an outstanding candidate material for chiral topological superconductivity.

Keywords

Cite

@article{arxiv.2512.13808,
  title  = {Chiral topological superconductivity in hole-doped Sn/Si(111)},
  author = {Matthew Bunney and Lucca Marchetti and Domenico Di Sante and Carsten Honerkamp and Stephan Rachel},
  journal= {arXiv preprint arXiv:2512.13808},
  year   = {2025}
}

Comments

(7+8 pages, 4+5 figures)