Related papers: The ferroelectric field-effect transistor with neg…
By developing a two-dimensional (2D) full quantum simulation, the attributes of carbon nanotube field-effect transistors (CNTFETs) in different temperatures have been comprehensively investigated. Simulations have been performed by…
In this paper, we demonstrate by simulation the feasibility of electrostatically doped and therefore reconfigurable planar field-effect-transistor (FET) structure which is based on our already fabricated and published Si-nanowire (SiNW)…
Carbon nanotube field-effect transistors (FETs) with passivated coaxial gate structures have been fabricated after growth of contacted suspended single wall nanotubes (SWNTs) and subsequent coating with gate dielectrics. Electron…
Ferroelectric field-effect transistors integrated on 2D semiconducting platforms are extremely relevant for low power electronics. Here, we propose and demonstrate a novel phase-change ferroelectric field effect transistor (PCFE-FET) for…
We report optically as well as electronically controlled, bio-electronic field-effect transistor (FET) based on the hybrid film of a photo-active purple membrane and electronically conducting single-walled carbon nanotubes (SWNTs). Two…
We consider a typical heterostructure domain patterned ferroelectric film/ultra thin dielectric layer/ semiconductor, where the semiconductor can be an electrolyte, paraelectric or multi layered graphene. Unexpectedly we have found that the…
Current studies of non-reciprocal superconducting (SC) transport have centered on the forward-backward asymmetry of the critical current measured along a single axis. In most realizations, this diode effect is achieved via introducing…
We show how nanostructuring of a metallic gate on a field-effect transistor (FET) can lead to a macroscopic, robust and voltage controlled quantum state in the electron channel of a FET. A chain of triple quantum dot molecules created by…
Desirably, the world relies on the devices being compact, as they could drive to the increased functionality of integrated circuits at the provided footstep, that is becoming more reliable. To reduce the scalability over the devices,…
In their original formulation of superconductivity, the London brothers predicted the exponential suppression of an $electrostatic$ field inside a superconductor over the so-called London penetration depth, $\lambda_L$. Despite a few…
We investigated the electrical properties of the liquid crystal compound, known as an RM734, exhibiting a ferroelectric nematic phase. The influence of alternating (AC) and direct (DC) current electric fields on the switching process of the…
Using 2-D self-consistent ballistic quantum transport simulations, we investigate the short-channel behavior of graphene field-effect transistors and its impact on the device transconductance and subsequently the intrinsic cut-off frequency…
Ferroelectric field-effect transistors (Fe-FETs) with ferroelectric hafnium oxide (FE HfO2) as gate insulator are being extensively explored as a promising device candidate for three-dimensional (3D) NAND memory application. FE HfO2…
Negative differential conductance (NDC), characterized by the decreasing current with increasing voltage, has attracted continuous attention for its various novel applications. The NDC typically exists in a certain range of bias voltages…
We demonstrate that superconducting aluminium nano-bridges can be driven into a state with complete suppression of the critical supercurrent via electrostatic gating. Probing both in- and out-of-plane magnetic field responses in the…
Field-effect transistors (FETs) predominantly utilize electrons for signal processing in modern electronics. In contrast, phonon-based field-effect transistors (PFETs)-which employ phonons for active thermal management-remain markedly…
The mobility-degradation-based model for the drain-to-source or output resistance of a graphene field-effect-transistor is linearized here using a Taylor series approximation. This simplification is shown to be valid from magnitudes of the…
We report a method to pattern monolayer graphene nanoconstriction field effect transistors (NCFETs) with critical dimensions below 10 nm. NCFET fabrication is enabled by the use of feedback controlled electromigration (FCE) to form a…
Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It…
A low complexity computational model of the current-voltage characteristics for graphene nano-ribbon (GNR) field effect transistors (FET), able to simulate a hundred of points in few seconds using a PC, is presented. For quantum capacitance…