Related papers: Electrically Enhanced Exchange Bias via Solid Stat…
We demonstrate the exchange coupling of a ferromagnetic semiconductor (Ga1-xMnxAs) with an overgrown antiferromagnet (MnO). Unlike most conventional exchange biased systems, the blocking temperature of the antiferromagnet (T_B = 48 +- 2 K)…
Charge transfer induced interfacial ferromagnetism and its impact on the exchange bias effect in La$_{0.7}$Sr$_{0.3}$MnO$_3$/NdNiO$_3$ correlated oxide heterostructures were investigated by soft x-ray absorption and x-ray magnetic circular…
Solid state ionic approaches for modifying ion distributions in getter/oxide heterostructures offer exciting potentials to control material properties. Here we report a simple, scalable approach allowing for total control of the…
Intrinsic magnetoelectric coupling describes the interaction between magnetic and electric polarization through an inherent microscopic mechanism in a single phase material. This phenomenon has the potential to control the magnetic state of…
An approach to adjusting the conduction band population for tuning the magnetic and magnetocaloric response of EuO1-{\delta} thin films through control of oxygen vacancies ({\delta} = 0, 0.025, and 0.09) is presented. The films each showed…
In metal/oxide heterostructures, rich chemical, electronic, magnetic and mechanical properties can emerge from interfacial chemistry and structure. The possibility to dynamically control interface characteristics with an electric field…
Ferrimagnetic Y$_3$Fe$_5$O$_{12}$ grown on the (001) surface of paramagnetic Gd$_3$Ga$_5$O$_{12}$ experiences an exchange bias field, which has been attributed to the magnetism of an interface layer between the two materials. We report here…
The magnetization reversal in stripe-like exchange bias patterned $\rm Ni_{81}Fe_{19}/IrMn$ thin films was investigated by complementary inductive and high resolution magneto optical magnetometry, magneto optical Kerr microscopy, and…
We demonstrated an electric field controlled exchange bias (EB) effect accompanied with unipolar resistive switching behavior in the Si/SiO2/Pt/Co/NiO/Pt device. By applying certain voltages, the device displays obvious EB in…
Motivated by recent experiments, the effect of the interlayer exchange interaction $J_{inter}$ on the magnetic properties of coupled Co/Cu/Ni trilayers is studied theoretically. Here the Ni film has a lower Curie temperature $T_{C,\rm Ni}$…
With the recent experimental verification that ferroelectric lattice distortions survive in the metallic phase of some materials, there is a desire to create devices that are both switchable and take advantage of the novel functionalities…
We report the new results of exchange bias effect in Nd_{1-x}Sr_{x}CoO_3 for x = 0.20 and 0.40, where the exchange bias phenomenon is involved with the ferrimagnetic (FI) state in a spontaneously phase separated system. The zero-field…
Electric-field induced magnetization switching in multiferroic magnetoelectric devices is promising for beyond Moore's law computing. We show here that interface-coupled multiferroic heterostructures, i.e., a ferroelectric layer coupled…
Roughness-insensitive and electrically controllable magnetization at the (0001) surface of antiferromagnetic chromia is observed using magnetometry and spin-resolved photoemission measurements and explained by the interplay of surface…
We provide an overview of progress on the exchange biasing of a ferromagnetic semiconductor (Ga1-xMnxAs) by proximity to an antiferromagnetic oxide layer (MnO). We present a detailed characterization study of the antiferromagnetic layer…
Voltage control of magnetism via magneto-ionics, where ion transport and/or redox processes drive magnetic modulation, holds great promise for next-generation memories and computing. This stems from its non-volatility and ability to…
Perpendicular exchange bias has been manipulated by changing ferromagnetic film thickness and spacer layer in Pt/Co/(Pt, Cr)/CoO thin films. The exchange bias characteristics, blocking temperature, magnetization of thin films strongly…
First-principles density-functional theory calculations show switching magnetization by 90 degree can be achieved in ultrathin BFO film by applying external electric-field. Up-spin carriers appear to the surface with positive field while…
Electric control of magnetism is a vision which drives intense research on magnetic semiconductors and multiferroics. Recently, also ultrathin metallic films were reported to show magnetoelectric effects at room temperature. Here we…
Controlling magnetism by using electric fields is a goal of research towards novel spintronic devices and future nano-electronics. For this reason, multiferroic heterostructures attract much interest. Here we provide experimental evidence,…