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Related papers: Test-beam and simulation studies for the CLICTD te…

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Monolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure…

The Compact Linear Collider (CLIC) is a concept for a future linear collider that would provide e$^+$e$^-$ collisions at up to 3 TeV. The physics aims require a detector system with excellent jet energy and track momentum resolution, highly…

Instrumentation and Detectors · Physics 2018-03-05 Florian Pitters

The concept of capacitive coupling between sensors and readout chips is under study for the vertex detector at the proposed high-energy CLIC electron positron collider. The CLICpix Capacitively Coupled Pixel Detector (C3PD) is an active…

Instrumentation and Detectors · Physics 2017-10-06 I. Kremastiotis , R. Ballabriga , M. Campbell , D. Dannheim , A. Fiergolski , D. Hynds , S. Kulis , I. Peric

CMOS sensors were successfully implemented in the STAR tracker [1]. LHC experiments have shown that efficient b tagging, reconstruction of displaced vertices and identification of disappearing tracks are necessary. An improved vertex…

Instrumentation and Detectors · Physics 2021-05-21 Nicolas T. Fourches , Geraldine Hallais , Charles Renard

CMOS pixel sensors (CPS) represent a novel technological approach to building charged particle detectors. CMOS processes allow to integrate a sensing volume and readout electronics in a single silicon die allowing to build sensors with a…

Collider detectors have taken advantage of the resolution and accuracy of silicon detectors for at least four decades. Future colliders will need large areas of silicon sensors for low mass trackers and sampling calorimetry. Monolithic…

Monolithic CMOS pixel detectors have emerged as competitive contenders in the field of high-energy particle physics detectors. By utilizing commercial processes they offer high-volume production of such detectors. A series of prototypes has…

This paper presents the design and results of detailed tests of a CMOS active pixel chip for charged particle detection with in-pixel charge storage for correlated double sampling and readout in rolling shutter mode at frequencies up to 25…

Instrumentation and Detectors · Physics 2016-11-17 Marco Battaglia , Jean-Marie Bussat , Devis Contarato , Peter Denes , Piero Giubilato , Lindsay E. Glesener

The Multi-Chip-Module-Deposited (MCM-D) technique has been used to build hybrid pixel detector assemblies. This paper summarises the results of an analysis of data obtained in a test beam campaign at CERN. Here, single chip hybrids made of…

Instrumentation and Detectors · Physics 2008-11-26 K. -H. Becks , P. Gerlach , C. Grah , P. Maettig , T. Rohe

CLIC is a proposed linear e+e- collider designed to provide particle collisions at center-of-mass energies of up to 3 TeV. Precise measurements of the properties of the top quark and the Higgs boson, as well as searches for Beyond the…

Instrumentation and Detectors · Physics 2017-06-21 Simon Spannagel

The Compact Linear Collider, CLIC, is a multi-TeV electron-positron collider proposed for construction at CERN. A detector model, CLICdet, that is suited for the experimental conditions at CLIC and is based on realistic performance, has…

High Energy Physics - Experiment · Physics 2019-09-30 Emilia Leogrande , Philipp Roloff , Ulrike Schnoor , Matthias Weber

Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected…

The goal of the TANGERINE project is to develop the next generation of monolithic silicon pixel detectors using a 65 nm CMOS imaging process, which offers a higher logic density and overall lower power consumption compared to previously…

MiniCACTUS-v2 is a monolithic sensor prototype designed in LF 150 nm CMOS process for time tagging of individual Minimum Ionizing Particles with an accuracy better than 100 ps. The sensing element is a deep n-well/p-substrate diode without…

Instrumentation and Detectors · Physics 2026-02-24 Y. Degerli , R. Aleksan , R. Casanova , Y. Gan , S. Grinstein , F. Guilloux , A. Hanlon , T. Hemperek , J. P. Meyer , J. Pinol , P. Schwemling , E. Vilella

This paper presents the design of a new monolithic Silicon-On-Insulator pixel sensor in $200~nm$ SOI CMOS technology. The main application of the proposed pixel detector is the spectroscopy, but it can also be used for the minimum ionizing…

Instrumentation and Detectors · Physics 2015-07-06 Szymon Bugiel , Roma Dasgupta , Sebastian Glab , Marek Idzik , Jakub Moron , Piotr Julian Kapusta , Wojciech Kucewicz , Michal Turala

This paper presents the design and results of detailed tests of a CMOS active pixel chip for charged particle detection with in-pixel charge storage for correlated double sampling and readout in rolling shutter mode at frequencies up to 25…

Instrumentation and Detectors · Physics 2009-01-27 Marco Battaglia , Jean-Marie Bussat , Devis Contarato , Peter Denes , Piero Giubilato , Lindsay E. Glesener

This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics…

Instrumentation and Detectors · Physics 2009-06-23 Marco Battaglia , Dario Bisello , Devis Contarato , Peter Denes , Piero Giubilato , Lindsay Glesener , Serena Mattiazzo , Chinh Vu

An ever-increasing demand for high-performance silicon sensors requires complex sensor designs that are challenging to simulate and model. The combination of electrostatic finite element simulations with a transient Monte Carlo approach…

CMOS Pixel Sensors are making steady progress towards the specifications of the ILD vertex detector. Recent developments are summarised, which show that these devices are close to comply with all major requirements, in particular the…

A study of 3D pixel sensors of cell size 50 {\mu}m x 50 {\mu}m fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch…