Related papers: High mobility SiMOSFETs fabricated in a full 300mm…
A fault-tolerant quantum processor may be configured using stationary qubits interacting only with their nearest neighbours, but at the cost of significant overheads in physical qubits per logical qubit. Such overheads could be reduced by…
We demonstrate high-fidelity single qubit control in a natural Si-MOS quantum dot fabricated in an industrial 300 mm wafer process on a silicon on insulator (SOI) wafer using electron spin resonance. A relatively high optimal Rabi frequency…
Graphene-based devices have shown great promise for several applications. For graphene devices to be used in real-world systems, it is necessary to demonstrate competitive device performance, repeatability of results, reliability, and a…
Si dominates the semiconductor industry material but possesses an abnormally low room temperature hole mobility (505 cm^2/Vs), which is four times lower than that of Diamond and Ge (2000 cm^2/Vs), two adjacent neighbours in the group IV…
By applying the conventional two-liquid model to the magnetoresistivity tensor, we reveal a record-high carrier mobility for surface states in tetradymite topological insulators ($\sim$ 20000 cm$^2$/Vs) in both bulk crystals and thin flakes…
Superconducting qubits provide a promising approach to large-scale fault-tolerant quantum computing. However, qubit connectivity on a planar surface is typically restricted to only a few neighboring qubits. Achieving longer-range and more…
InSb is one of the promising candidates to realize a topological state through proximity induced superconductivity in a material with strong spin-orbit interactions. In two-dimensional systems, thin barriers are needed to allow strong…
This paper addresses the question of whether a ``rigid molecule'' (one which does not deform in an external field) used as the conducting channel in a standard three-terminal MOSFET configuration can offer any performance advantage relative…
We investigate carrier transport in a single 22 nm-thick double-gated Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and Hall mobility are mapped in a broad double-gate voltage…
Scaling is now a key challenge in superconducting quantum computing. One solution is to build modular systems in which smaller-scale quantum modules are individually constructed and calibrated, and then assembled into a larger architecture.…
While 2D materials have enormous potential for future device technologies, many challenges must be overcome before they can be deployed at an industrial scale. One of these challenges is identifying the right semiconductor/insulator…
We have performed four-probe electrical transport measurements on solitary highly crystalline wires of semimetallic bismuth with aspect ratios up to 60 at room and at cryogenic temperatures. By proper choice of the substrate material and…
Graphene enables precise carrier-density control via gating, making it an ideal platform for studying electronic interactions. However, sample inhomogeneities often limit access to the low-density regimes where these interactions dominate.…
In this letter, fin-shape tri-gate $\beta$-Ga$_{2}$O$_{3}$ lateral MESFETs are demonstrated with a high power figure of merit of 0.95 GW/cm$^{2}$ - a record high for any $\beta$-Ga$_{2}$O$_{3}$ transistor to date. A low-temperature undoped…
Enabling applications for solid state quantum technology will require systematically reducing noise, particularly dissipation, in these systems. Yet, when multiple decay channels are present in a system with similar weight, resolution to…
Packages capable of supporting large arrays of high-coherence superconducting qubits are vital for the realisation of fault-tolerant quantum computers and the necessary high-throughput metrology required to optimise fabrication and…
Scaling up quantum computing hardware is hindered by the narrow operating margins of current quantum components. Here, we introduce a composite qubit and gate scheme that achieves wide margins by use of transistor-like nonlinearities to…
The Superconducting Materials and Systems (SQMS) Center, a DOE National Quantum Information Science Research Center, has conducted a comprehensive and coordinated study using superconducting transmon qubit chips with known performance…
Two-dimensional (2D) semiconductors, such as the transition metal dichalcogenides, have demonstrated tremendous promise for the development of highly tunable quantum devices. Realizing this potential requires low-resistance electrical…
We determine the energy splitting of the conduction-band valleys in two-dimensional (2D) electrons confined in silicon metal oxide semiconductor (Si-MOS) Hall-bar transistors. These Si-MOS Hall bars are made by advanced semiconductor…