Related papers: High mobility SiMOSFETs fabricated in a full 300mm…
We perform quantum Hall measurements on three types of commercially available modulation doped Si/SiGe heterostructures to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we…
To reach large-scale quantum computing, three-dimensional integration of scalable qubit arrays and their control electronics in multi-chip assemblies is promising. Within these assemblies, the use of superconducting interconnections, as…
In the present work we undertake a re-examination of effective mass theory (EMT) for a semiconductor quantum dot. We take into account the fact that the effective mass ($m_i$) of the carrier inside the dot of radius R is distinct from the…
Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices with SnS thickness between 50 and 100 nm were fabricated and studied to understand their performances. The devices showed anisotropic inplane…
High-temperature superconductivity confined to nanometer-size interfaces has been a long standing goal because of potential applications^{1,2} and the opportunity to study quantum phenomena in reduced dimensions^{3,4}. However, this is a…
The maturity of the chemical vapor deposition graphene-based device processing has increased from chip level demonstrations to wafer-scale fabrication in the past few years. Due to this wafer-scale, electrical characterization and analysis…
This study alleviates the low operating temperature constraint of Si qubits. A qubit is a key element for quantum sensors, memories, and computers. Electron spin in Si is a promising qubit, as it allows both long coherence times and…
Two-dimensional (2D) crystalline semiconductors hold promise for next-generation electronic devices due to its atomical thickness and consequent properties. Despite years of search, literature-reported 2D semiconductors commonly suffered…
Low-dimensional materials such as layered semiconductors or carbon nanotubes (CNTs) have been attracting increasing attention in the last decades due to their inherent scaling properties, which become fundamental to sustain the scaling in…
In this paper we present an improved process for producing elastomer transistor stamps and high-mobility organic field-effect transistors (FETs) based on semiconducting acene molecular crystals. In particular, we have removed the need to…
Semiconductor quantum dots in silicon are promising qubits because of long spin coherence times and their potential for scalability. However, such qubits with complete electrical control and fidelities above the threshold for quantum error…
The exciting field of stretchable electronics (SE) promises numerous novel applications, particularly in-body and medical diagnostics devices. However, future advanced SE miniature devices will require high-density, extremely stretchable…
Scalable fault-tolerant quantum computer architectures require quantum gates that operate within a small fraction of the qubit decoherence time and with high accuracy over a bandwidth set by the decoherence rate. Electron spin quantum bits…
Recent advances in semiconductor spin qubits have achieved linear arrays exceeding ten qubits. Moving to two-dimensional (2D) qubit arrays is a critical next step to advance towards fault-tolerant implementations, but it poses substantial…
Scaling down the GaN channel in a double heterostructure AlGaN/GaN/AlGaN High Electron Mobility Transistor (HEMT) to the thicknesses on the order of or even smaller than the Bohr radius confines electrons in the quantum well even at low…
Building large-scale superconducting quantum computers requires two complimentary elements: scalable wiring techniques and multiplex architectures. In our previous work [B\'ejanin et al., Phys. Rev. Applied 6, 044010 (2016)], we have…
Diamond has attracted attention as a next-generation semiconductor because of its various exceptional properties such as a wide bandgap and high breakdown electric field. Diamond field effect transistors, for example, have been extensively…
The superior intrinsic properties of graphene have been a key research focus for the past few years. However, external components, such as metallic contacts, serve not only as essential probing elements, but also give rise to an effective…
The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy…
For applications to sensor design, the product nxmu of the electron density n and the mobility mu is a key parameter to be optimized for enhanced device sensitivity. We model the carrier mobility in a two dimensional electron gas (2DEG)…