Related papers: Non volatile photo-switch using a diamond pn junct…
It is proposed that the ground-state manifold of the neutral nitrogen-vacancy center in diamond could be used as a quantum two-level system in a solid-state-based implementation of a broadband, noise-free quantum optical memory. The…
Transition metal dichalcogenide (TMDC) monolayers have attracted much attention due to their strong light absorption and excellent electronic properties. These advantages make this type of two-dimensional crystal a promising one for…
Using a block of three separated solid elements, a thermal source and drain together with a gate made of an insulator-metal transition material exchanging near-field thermal radiation, we introduce a nanoscale analog of a field-effect…
We propose a fast, scalable all-optical design for arbitrary two-qubit operations for defect qubits in diamond (NV centers) and in silicon carbide, which are promising candidates for room temperature quantum computing. The interaction…
Deterministic photon-photon gates enable the controlled generation of entanglement between mobile carriers of quantum information. Such gates have thus far been exclusively realized in the optical domain and by relying on post-selection.…
We present a rigorous theoretical model for the optical interaction between a nitrogen-vacancy (NV) centre in diamond and a plasmonic metal nanoparticle (MNP), accompanied by a computationally efficient procedure to solve the evolution. The…
Electrons transmitted across a ballistic semiconductor junction undergo refraction, analogous to light rays across an optical boundary. A pn junction theoretically provides the equivalent of a negative index medium, enabling novel electron…
The efficient interfacing of quantum emitters and photons is fundamental to quantum networking. Quantum defects embedded in integrated nanophotonic circuits are promising for such applications due to the deterministic light-matter…
The controlled manipulation of the charge carrier concentration in nanometer thin layers is the basis of current semiconductor technology and of fundamental importance for device applications. Here we show that it is possible to induce a…
We propose an all-optical scheme to prolong the quantum coherence of a negatively charged nitrogen-vacancy (NV) center in diamond. Optical control of the NV spin suppresses energy fluctuations of the $^{3}\text{A}_{2}$ ground states and…
Photonic spin density (PSD) in the near-field gives rise to exotic phenomena such as photonic skyrmions, optical spin-momentum locking and unidirectional topological edge waves. Experimental investigation of these phenomena requires a…
A vertical transistor based on a double gated, atomically thin heterojunction is theoretically examined. Both p-type and n-type transistor operations can be conveniently achieved by using one of the two gates as the switching gate. The…
The nitrogen-vacancy (NV) centre in diamond is emerging as a promising platform for solid-state quantum information processing and nanoscale metrology. Of interest in these applications is the manipulation of the NV charge, which can be…
The photophysics and charge state dynamics of the nitrogen vacancy (NV) center in diamond has been extensively investigated but is still not fully understood. In contrast to previous work, we find that NV$^{0}$ converts to NV$^{-}$ under…
Large-scale entanglement of nitrogen-vacancy (NV) centers in diamond will require integration of NV centers with optical networks. Toward this goal, we present the fabrication of single-crystalline gallium phosphide (GaP)…
Quantum interference can produce a pivotal effective photon-photon interaction, enabling the exploration of various quantum information technologies that beyond the possibilities of classical physics. While such an effective interaction is…
In the pursuit of room temperature quantum hardware, our study introduces a gate voltage tunable quantum wire within a tri-gated n-type junctionless MOSFET. The application of gate voltage alters the parabolic potential well of the…
Non-magnetic p-n junctions have been fundamental components in the silicon era, serving as the backbone for nearly all Si-based semiconductor devices, including transistors. To tackle challenges such as scaling limitations, excessive…
Photons do not carry sufficient momentum to induce indirect optical transitions in semiconducting materials such as silicon, necessitating the assistance of lattice phonons to conserve momentum. Compared to direct bandgap semiconductors,…
We demonstrate the super-resolution localization of the nitrogen vacancy centers in diamond by a novel fluorescence photoswitching technique based on coherent quantum control. The photoswitching is realized by the quantum phase encoding…