Related papers: Non volatile photo-switch using a diamond pn junct…
Finding the right material platform for engineering efficient photonic interfaces to solid state emitters has been a long-standing bottleneck for scaling up solid state quantum systems. In this work, we demonstrate that nitrogen-rich…
Nitrogen vacancy (NV-) color centers in diamond are a prime candidate for use in quantum information devices, owing to their spin-1 ground state, straightforward optical initialization and readout, and long intrinsic coherence times in a…
Solid state atom-like systems have great promise for linear optic quantum computing and quantum communication but are burdened by phonon sidebands and broadening due to surface charges. Nevertheless, coupling to a small mode volume cavity…
We investigated ultrafast nonlinear optical effects in nitrogen-vacancy (NV)-containing diamond which is in contact with a gold-coated blazed diffraction grating using a pump-probe reflectivity technique. The reflectivity change caused by…
We theoretically propose a method to realize optical nonreciprocity in rotating nano-diamond with a nitrogen-vacancy (NV) center. Because of the relative motion of the NV center with respect to the propagating fields, the frequencies of the…
Dynamical nuclear polarisation (DNP) is an important technique that uses polarisation transfer from electron to nuclear spins to achieve nuclear hyperpolarisation. As the electron spin of the nitrogen vacancy (NV) centres in diamond can be…
We present a systematic study of the current-voltage characteristics and electroluminescence of gallium nitride (GaN) nanowire on silicon (Si) substrate heterostructures where both semiconductors are n-type. A novel feature of this device…
The photodynamics of diamond nitrogen-vacancy (NV) centers limits their performance in many quantum technologies. Quenching of photoluminescence, which degrades NV readout, is commonly ascribed to a dark state that is not fully understood.…
The silicon-vacancy (SiV) and nitrogen-vacancy (NV) centers in diamond are commonly regarded as prototypical defects for solid-state quantum information processing. Here we show that when silicon and nitrogen are simultaneously introduced…
The absence of a band-gap in graphene limits the gate modulation of its electron conductivity, both in regular graphene as well as in PN junctions, where electrostatic barriers prove transparent to Klein tunneling. We demonstrate a novel…
We demonstrate an all solid state semiconductor device, based on epitaxial single crystalline metal halide perovskites, enabling reversible control of a perovskite photoluminescence with a gate voltage. Fundamentally distinct from…
Scaling beyond two-node quantum networks using nitrogen vacancy (NV) centers in diamond is limited by the low probability of collecting zero phonon line (ZPL) photons from single centers. Here, we demonstrate GaP-on-diamond disk resonators…
Photocurrents in nanotube p-n junctions are calculated using a non-equilibrium Green function quantum transport formalism. The short-circuit photocurrent displays band-to-band transitions and photon-assisted tunneling, and has multiple…
Junctionless Nanowire Field-Effect Transistors (JNFETs), where the channel region is uniformly doped without the need for source-channel and drain-channel junctions or lateral doping abruptness, are considered an attractive alternative to…
Solid-state quantum emitters that couple coherent optical transitions to long-lived spin qubits are essential for quantum networks. Here we report on the spin and optical properties of individual tin-vacancy (SnV) centers in diamond…
The nitrogen-vacancy (NV) center in diamond has a wide range of potential applications in quantum metrology, communications and computation. The key to its use lies in how large the optical spin contrast is and the associated fidelity of…
Creation of sharp lateral p-n junctions in graphene devices, with transition widths well below the Fermi wavelength of graphene charge carriers, is vital to study and exploit these electronic systems for electron-optical applications. The…
Photoresponse of Au nanoparticle functionalized semiconducting GaN (Au-GaN) nanowires is reported for an optical switching using 532 excitation. Wide band gap GaN nanowires are grown by catalyst assisted chemical vapour deposition technique…
A key issue in the development of high-performance semiconductor devices is the ability to properly measure active dopants at the nanometer scale. 4D scanning transmission electron microscopy and off-axis electron holography have opened up…
Although the spin properties of superficial shallow nitrogen-vacancy (NV) centers have been the subject of extensive scrutiny, considerably less attention has been devoted to studying the dynamics of NV charge conversion near the diamond…