The efficient interfacing of quantum emitters and photons is fundamental to quantum networking. Quantum defects embedded in integrated nanophotonic circuits are promising for such applications due to the deterministic light-matter interactions of high-cooperativity (C>1) cavity quantum electrodynamics and potential for scalable integration with active photonic processing. Silicon-vacancy (SiV) centers embedded in diamond nanophotonic cavities are a leading approach due to their excellent optical and spin coherence, however their long-term scalability is limited by the diamond itself, as its suspended geometry and weak nonlinearity necessitates coupling to a second processing chip. Here we realize the first high-cooperativity coupling of quantum defects to hybrid-integrated nanophotonics in a scalable, planar platform. We integrate more than 600 gallium phosphide (GaP) nanophotonic cavities on a diamond substrate with near-surface SiV centers. We examine a particular device with two strongly coupled SiV centers in detail, confirming above-unity cooperativity via multiple independent measurements. Application of an external magnetic field via a permanent magnet enables optical resolution of the SiV spin transitions from which we determine a spin-relaxation time T1>0.4 ms at 4 K. We utilize the high cooperativity coupling to observe spin-dependent transmission switching and the quantum jumps of the SiV spin via single-shot readout. These results, coupled with GaP's strong nonlinear properties, establish GaP-on-diamond as a scalable planar platform for quantum network applications.
@article{arxiv.2601.04733,
title = {A scalable gallium-phosphide-on-diamond spin-photon interface},
author = {Nicholas S. Yama and Chun-Chi Wu and Fariba Hatami and Kai-Mei C. Fu},
journal= {arXiv preprint arXiv:2601.04733},
year = {2026}
}