Room-temperature magnetic p-n junctions for charge-and-spin diodes
Abstract
Non-magnetic p-n junctions have been fundamental components in the silicon era, serving as the backbone for nearly all Si-based semiconductor devices, including transistors. To tackle challenges such as scaling limitations, excessive latency, and high-power consumption in Si-based electronics, we develop magnetic p-n junctions composed of a p-type amorphous magnetic semiconductor (p-AMS) and n-type Si. These charge-and-spin junctions exhibit typical diode characteristics for charge current, along with distinctive spin diode features. By manipulating spin-polarized space charges, we observed a giant magnetic enhancement of approximately 24.36% at a breakdown current of 5 mA, and an impressive 29-fold increase in magnetic moments for p-AMS. The observed spin behavior is attributed to space charge effects or carrier depletion in the p-AMS with extended hole states.
Keywords
Cite
@article{arxiv.2603.02506,
title = {Room-temperature magnetic p-n junctions for charge-and-spin diodes},
author = {Yuzhang Jiao and Yutong Wang and Xiangning Du and You Ba and Yingqi Zhang and Zhiwei Tang and Xiangrong Wang and Tiantian Chai and Xiaoke Mu and Cheng Song and Kefu Yao and Zhengjun Zhang and Yonggang Zhao and Na Chen},
journal= {arXiv preprint arXiv:2603.02506},
year = {2026}
}
Comments
17 pages, 4 figures