Related papers: Room-temperature magnetic p-n junctions for charge…
Magnetic $p$-$n$ junction diodes are fabricated to investigate spin-polarized electron transport. The injection of spin-polarized electrons in a semiconductor is achieved by driving a current from a ferromagnetic injector (Fe), into a bulk…
A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spinvoltaic…
In spin-polarized bipolar transport both electrons and holes in doped semiconductors contribute to spin-charge coupling. The current conversion between the minority (as referred to carriers and not spin) and majority carriers leads to novel…
For decades, semiconductors and their heterostructures have underpinned both fundamental and applied research across all areas of electronics. Two-dimensional, 2D (atomically thin) semiconductors have now the potential to push further the…
A key issue in the development of high-performance semiconductor devices is the ability to properly measure active dopants at the nanometer scale. 4D scanning transmission electron microscopy and off-axis electron holography have opened up…
A domain wall separating two oppositely magnetized regions in a ferromagnetic semiconductor exhibits, under appropriate conditions, strongly nonlinear I-V characteristics similar to those of a p-n diode. We study these characteristics as…
The carrier spin and impurity spin densities in diluted magnetic semiconductors are considered using a semiclassical approach. Equations of motions for the spin densities and the carrier spin current density in the paramagnetic phase are…
Spin-phonon interactions in 2D magnetic materials are crucial in advancing next-generation spintronic devices. Therefore, identifying new materials with significant spin-phonon interactions is of great importance. In this context, MnSe,…
Spin splitting of photoelectrons in p-type and electrons in n-type III-V Mn-based diluted magnetic semiconductors is studied theoretically. It is demonstrated that the unusual sign and magnitude of the apparent s-d exchange integral…
We demonstrate theoretically that the spin polarization of current can be electrically amplified within nonmagnetic semiconductors by exploiting the fact the spin current, compared to the charge current, is weakly perturbed by electric…
Unipolar devices constructed from ferromagnetic semiconducting materials with variable magnetization direction are shown theoretically to behave very similarly to nonmagnetic bipolar devices such as the p-n diode and the bipolar (junction)…
We study the magnetic properties of the adatom systems on a semiconductor surface Si(111):\{C,Si,Sn,Pb\} - ($\sqrt{3} \times \sqrt{3}$). On the basis of all-electron density functional theory calculations we construct effective low-energy…
Using a pair of p- and n-type semiconductors separated by a nanoscale vacuum gap, we introduce an optoelectronics element prototype, "photonic p-n junction", as an analogue of the electronic p-n junction, which is demonstrated to serve as…
The recent advent of a new class of magnetic material named as {\it altermagnet} (AM), characterized by a combination of momentum-dependent spin splitting with zero net magnetization, has opened up promising prospects for spintronic…
In an inhomogeneously doped magnetic semiconductor spin relaxation time T_1 can be determined by all-electrical measurements. Nonequilibrium spin injected in a magnetic p-n junction gives rise to the spin-voltaic effect where the…
Alternating layers of granular Iron (Fe) and Titanium dioxide (TiO$_{2-\delta}$) were deposited on (100) Lanthanum aluminate (LaAlO$_3$) substrates in low oxygen chamber pressure using a controlled pulsed laser ablation deposition…
We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially…
The entanglement of the charge, spin and orbital degrees of freedom can give rise to emergent behavior especially in thin films, surfaces and interfaces. Often, materials that exhibit those properties require large spin orbit coupling. We…
High-quality N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy. The room-temperature current-voltage characteristics reveal a high on/off current ratio of 10^11 at 4 V…
Topologically nontrivial states, the solitons, emerge as elementary excitations in 1D electronic systems. In a quasi 1D material the topological requirements originate the spin- or charge- roton like excitations with charge- or spin- kinks…