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In a hard switched MOSFET based converter, turn-on energy losses is predominant in the total switching loss. At higher junction temperature the turn-on energy loss further increases due to the reverse recovery effect of the complementary…
Identification of microscopic configuration of point defects acting as quantum bits is a key step in the advance of quantum information processing and sensing. Among the numerous candidates, silicon vacancy related centers in silicon…
Optically-active point defects in various host materials, such as diamond and silicon carbide (SiC), have shown significant promise as local sensors of magnetic fields, electric fields, strain and temperature. Current sensing techniques…
A new DC thermal model of Carbon Nanotube Field Effect Transistors (CNTFETs) is proposed. The model is based on a number of fitting parameters depending on bias conditions by third order polynomials. The model includes three thermal…
Metal-Oxide-Semiconductor (MOS) structures containing 74Ge nanocrystals (NC-Ge) imbedded inside the SiO_2 layer were studied for their capacitance characterization. Ge atoms were introduced by implantation of 74Ge+ ions with energy of 150…
Studying the electrical and structural properties of the interface of the gate oxide (SiO2) with silicon carbide (4H-SiC) is a fundamental topic, with important implications for understanding and optimizing the performances of…
A Pearson Effective Potential model for including quantization effects in the simulation of nanoscale nMOSFETs has been developed. This model, based on a realistic description of the function representing the non zero-size of the electron…
Silicon carbide (SiC) emerges as a promising ceramic material for high-temperature structural applications, especially within the aerospace sector. The utilization of SiC-based ceramic matrix composites (CMCs) instead of superalloys in…
The silicon/silicon dioxide (Si/SiO2) interface plays a crucial role in the performance, cost, and reliability of most modern microelectronic devices, from the basic transistor to flash memory, digital cameras, and solar cells. Today the…
Historically, VLSI designers have focused on increasing the speed and reducing the area of digital systems. However, the evolution of portable systems and advanced Deep Sub-Micron fabrication technologies have brought power dissipation as…
This paper presents a fully-integrated CMOS temperature sensor for densely-distributed thermal monitoring in systems on chip supporting dynamic voltage and frequency scaling. The sensor front-end exploits a sub-threshold PMOS-based circuit…
In contrast to the static operations of conventional semiconductor devices, the dynamic conformational freedom in molecular devices opens up the possibility of using molecules as new types of devices such as a molecular conformational…
HoSbTe was predicted to be a weak topological insulator, whose spin-orbit coupling (SOC) gaps are reported to be as large as hundreds of meV. Utilizing infrared spectroscopy, we find that the compound is of metallic nature from 350 K down…
Cubic silicon carbide phonon thermal conductivity has been calculated using anharmonic phonon analysis. The atomic interaction model was built using displacement-force data obtained with the High Efficiency Configuration Space Sampling…
An analysis of the oxide trapped charge noise in a MOSFET operated down to deep cryogenic temperatures is proposed. To this end, a revisited derivation of the interface trap conductance Gp and oxide trapped charge noise SQt at the SiO2/Si…
In this paper, through careful calibration, we demonstrate the possibility of using a single set of models and parameters to model the ON current and Sub-threshold Slope (SS) of an nMOSFET at 300K and 5K using Technology Computer-Aided…
We present first-principles calculations of the structural and electronic properties of Si(001)-SiO2 interfaces. We first arrive at reasonable structures for the c-Si/a-SiO2 interface via a Monte-Carlo simulated annealing applied to an…
Nyquist criterion-based impedance ratio criteria (IRCs) have been widely applied for inspecting the risk of small-signal instability among converter-based AC power systems. Aided by a comparative study on voltage source converter, including…
The structural and electronic properties of amorphous silicon ($a$-Si) are investigated by first-principles calculations based on the density-functional theory (DFT), focusing on the intrinsic structural defects. By simulated melting and…
In high-power applications, multiple power MOSFETs are connected in parallel and treated as a single switch in order to handle much larger total currents. In this paper, a parallel power MOSFETs model from the turnoff state until they reach…