Modeling of parallel power MOSFETs in steady-state
Applied Physics
2023-02-16 v1 Popular Physics
Abstract
In high-power applications, multiple power MOSFETs are connected in parallel and treated as a single switch in order to handle much larger total currents. In this paper, a parallel power MOSFETs model from the turnoff state until they reach their steady state is introduced. The model represents the relationship between each power MOSFET's gate voltage and the current distribution among them. The study's key purpose is to use the model for dealing with the asymmetry in sharing current and power loss between these semiconductor devices during the steady state region.
Cite
@article{arxiv.2302.07642,
title = {Modeling of parallel power MOSFETs in steady-state},
author = {Minh Nhat Huynh and Minh Khoi Nguyen Tien and Cong Toai Truong and Minh Tri Nguyen and Quoc Minh Lam and Van Tu Duong and Huy Hung Nguyen and Tan Tien Nguyen},
journal= {arXiv preprint arXiv:2302.07642},
year = {2023}
}
Comments
10 pages, 7 figures, The 2023 INTERNATIONAL SYMPOSIUM ON ADVANCED ENGINEERING (ISAE2023)