A Pearson Effective Potential for Monte-Carlo simulation of quantum confinement effects in various MOSFET architectures
Abstract
A Pearson Effective Potential model for including quantization effects in the simulation of nanoscale nMOSFETs has been developed. This model, based on a realistic description of the function representing the non zero-size of the electron wave packet, has been used in a Monte-Carlo simulator for bulk, single gate SOI and double-gate SOI devices. In the case of SOI capacitors, the electron density has been computed for a large range of effective field (between 0.1 MV/cm and 1 MV/cm) and for various silicon film thicknesses (between 5 nm and 20 nm). A good agreement with the Schroedinger-Poisson results is obtained both on the total inversion charge and on the electron density profiles. The ability of an Effective Potential approach to accurately reproduce electrostatic quantum confinement effects is clearly demonstrated.
Keywords
Cite
@article{arxiv.0808.3951,
title = {A Pearson Effective Potential for Monte-Carlo simulation of quantum confinement effects in various MOSFET architectures},
author = {M. -A. Jaud and S. Barraud and P. Dollfus and H. Jaouen},
journal= {arXiv preprint arXiv:0808.3951},
year = {2009}
}
Comments
13 pages, 11 figures, 3 tables