Related papers: A Compact Model for SiC Power MOSFETs for Large Cu…

Here, we quantitatively determine the impact of III-V/Si interface atomic configuration on the wetting properties of the system. Based on a description at the atomic scale using density functional theory, we first show that it is possible…

This paper reports on the physical and temperature-dependent electrical characterizations of the oxide/semiconductor interface in MOS capacitors with a SiO2 layer deposited on 4H-SiC using dichlorosilane and nitrogen-based vapor precursors.…

A graphical representation based on the isothermal current-voltage (IV) measurements of typical memristive interfaces is presented. This is the starting point to extract relevant microscopic information of the parameters that control the…

For high-bias operation devices such as silicon carbide (SiC) power devices, early detection of failure mechanisms is essential to ensure reliability. This requires a method to map high electric fields with high spatial resolution, which…

This paper presents a physics-based model for the threshold voltage in bulk MOSFETs valid from room down to cryogenic temperature (4.2 K). The proposed model is derived from Poisson's equation including bandgap widening, intrinsic…

A compact model for the effect of parasitic internal fringe capacitance on threshold voltage in high-K gate dielectric SOI MOSFETs is developed. Our model includes the effects of the gate dielectric permittivity, spacer oxide permittivity,…

In this paper, SiO2 layers deposited on 4H-SiC and subjected to different post deposition annealing (PDA) in NO and N2O were studied to identify the key factors influencing the channel mobility and threshold voltage stability in 4H-SiC…

Silicon Photomultipliers (SiPM) represent a promising alternative to classical photomultipliers, for instance, for the detection of photons in high energy physics and medical physics. In the present work, electrical characterizations of…

Wide-bandgap (WBG) semiconductors have promising applications in power electronics due to their high voltages, radio frequencies, and tolerant temperatures. Among all the WBG semiconductors, SiC has attracted attention because of its high…

This work investigates the relationship between self-heating and the characteristic features observed in the current-voltage characteristics (IVCs) of superconductor-insulator-superconductor (SIS) junctions. Finite-element analysis is…

For a broad range of electron densities $n$ and temperatures $T$, the in-plane magnetoconductivity of the two-dimensional system of electrons in silicon MOSFET's can be scaled onto a universal curve with a single parameter…

This study employs advanced phase-field modeling to investigate Si-based qubit MOSFETs, integrating electrostatics and quantum mechanical effects. We adopt a comprehensive modeling approach, utilizing full-wave treatment of the Schrodinger…

The reliability of power semiconductor switches is important when considering their vital role in power electronic converters for downhole subsea applications. Respect to technology advancements in material sciences, power MOSFETs with wide…

Electrical conductivity (sigma_dc) of the cellular Si/SiC ceramic composites has been measured over a temperature range 25-1073 K while the thermoelectric power (S) has been measured over 25-300 K. Remarkably, these cellular compounds…

MOSFETs based on wide band-gap semiconductors are suitable for operations at high temperature, at which additional atomic-scale processes that are benign at lower temperatures can get activated which results in device degradation. Recently…

Integrated circuits (ICs) that can operate at high temperature have a wide variety of applications in the fields of automotive, aerospace, space exploration, and deep-well drilling. Conventional silicon-based complementary…

This paper reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFETs. At low temperatures both thermopower and conductivity show critical behaviour…

A first-principle model is proposed to study the electrostatic properties of a double-gated silicon slab of nano scale in the framework of density functional theory. The applied gate voltage is approximated as a variation of the…

In this work, a compact transport model has been developed for monolayer transition metal dichalcogenide (TMDC) channel MOSFET. The analytical model solves the Poisson's equation for the inversion charge density to get the electrostatic…

Using silicon MOSFETs with thin (5nm) thermally grown SiO2 gate dielectrics, we characterize the density of electrically active traps at low-temperature after 16keV phosphorus ion-implantation through the oxide. We find that, after rapid…