Related papers: Semiconductor-based selective emitter with sharp c…
Deep ultraviolet (UV) optical emission below 250 nm (~5 eV) in semiconductors is traditionally obtained from high aluminum containing AlGaN alloy quantum wells. It is shown here that high-quality epitaxial ultrathin binary GaN quantum disks…
Silicon's inherently indirect bandgap severely limits its radiative efficiency, posing a fundamental challenge to the development of practical silicon-based light sources. While strategies such as nanoscale confinement of electrons and…
Developing low-power, high-sensitivity photodetectors for the terahertz (THz) band that operate at room temperature is an important challenge in optoelectronics. In this study, we introduce a photo-thermal-electric (PTE) effect detector…
Germanium arsenide (GeAs) is a layered semiconductor with remarkably anisotropic physical, thermoelectric and optical properties, and a promising candidate for multifunctional devices based on in-plane polarization dependent response.…
The emergence of hexagonal Ge (2H-Ge) as a candidate direct-gap group-IV semiconductor for Si photonics mandates rigorous understanding of its optoelectronic properties. Theoretical predictions of a "pseudo-direct" band gap, characterized…
An unconventional approach to enhance the transverse thermopower by combining magnetic and thermoelectric materials, namely the Seebeck-driven transverse thermoelectric generation (STTG), has been proposed and demonstrated recently. Here,…
An ultra-broadband THz emitter covering a wide range of frequencies from 0.1 to 10 THz is highly desired for spectroscopy applications. So far, spintronic THz emitters have been proven as one class of efficient THz sources with a broadband…
We demonstrate multiplexed terahertz emitters that exhibits 2 THz bandwidth that do not require an external bias. The emitters operate under uniform illumination eliminating the need for a micro-lens array and are fabricated with periodic…
Heavily doped semiconductors are by far the most studied class of materials for thermoelectric applications in the past several decades. They have Seebeck coefficient values which are 2-3 orders of magnitude higher than metals, making them…
High-resolution angle-resolved photoemission experiments reveal subtle modifications of the surface electronic structure of VSe2. Most remarkably, we show that superconductivity can be induced in VSe2 by the right selection of substrate and…
In this communication, we report a theoretical attempt to understand the involvement of electronic structure in determination of optical and thermal properties of C$_{17}$Ge germagraphene, a buckled two dimensional material. The structure…
The development of semiconductor electronics is shortly reviewed, beginning with the development of germanium devices (band gap $E_g=0.66$ eV) after world war II. Quickly a tendency to alternative materials with wider band gap became…
Transient grating (TG) spectroscopy is an important experimental technique to measure mean free path (MFP) spectra using observations of quasiballistic heat conduction. To obtain MFP spectra, the measurements must be interpreted within the…
We report on a stable form of pulsed electroluminescence in a dopant-free direct bandgap semiconductor heterostructure which we coin the tidal effect. Swapping an inducing gate voltage in an ambipolar field effect transistor allows incoming…
Photoreflectance is used for the characterisation of semiconductor samples, usually by sweeping the monochromatized probe beam within the energy range comprised between the highest value set by the pump beam and the lowest absorption…
Future observatories utilizing reflection grating spectrometers for extreme ultraviolet (EUV) and soft X-ray (SXR) spectroscopy require high-fidelity gratings with both blazed groove facets and custom groove layouts that are often fanned or…
A true monolithic infrared photonics platform is within reach if strain and bandgap energy can be independently engineered in SiGeSn semiconductors. Herein, we investigate the structural and optoelectronic properties of a 1.5 {\mu}m-thick…
Nonreciprocal thermal emitters that break the conventional Kirchhoff's law allow independent control of emissivity and absorptivity and promise exciting new functionalities in controlling heat flow for thermal and energy applications. In…
To optimise the design of the light readout in the ArDM 1-ton liquid argon dark matter detector, a range of reflector and WLS coating combinations were investigated in several small setups, where argon scintillation light was generated by…
Epsilon near zero (ENZ) materials can contribute significantly to the advancement of spectrally selective coatings aimed at enhancing efficient use of solar radiation and thermal energy management. Here, we demonstrate a subwavelength…