Related papers: Semiconductor-based selective emitter with sharp c…
We report a novel method to reduce the collector-emitter offset-voltage of the wide bandgap SiC-P-emitter lateral HBTs using a dual-bandgap emitter. In our approach, the collector-emitter offset-voltage VCE(offset) is reduced drastically by…
A tapered semiconductor amplifier is injection seeded by a femtosecond optical frequency comb at 780 nm from a mode-locked Ti:sapphire laser. Energy gains over 17 dB (12 dB) are obtained for 1 mW (20 mW) of average input power when the…
Free-space time domain THz spectroscopy accesses electrodynamic responses in a frequency regime ideally matched to interacting condensed matter systems. However, THz spectroscopy is challenging when samples are physically smaller than the…
We theoretically investigate the electronic and optical properties of semiconductor Cu3PSe4. We also report diffuse reflectance spectroscopy measurements for Cu3PSe4 and Cu3PS4, which indicate a band gap of 1.40 eV for the former.Hybrid…
Selective reflection is a high-resolution spectroscopic method that allows the probing of atomic and molecular gases in the near field of dielectric cell windows. It is a sensitive technique for measuring interactions between excited atoms…
Photoconductive devices based on ultra-wide-bandgap (UWBG) materials offer a promising pathway toward compact, high-voltage (HV) optoelectronic and optical sensing in harsh environments. In this Letter, we report field-tunable nonlinear…
A large number of current and future experiments in neutrino and dark matter detection use the scintillation light from noble elements as a mechanism for measuring energy deposition. The scintillation light from these elements is produced…
We showed in past work that nanopatterned monolayer graphene (NPG) enables spectrally selective thermal emission in the mid-infrared (mid-IR) from 3 to 12 $\mu$m. In that case the spectral selection is realized by means of the localized…
Unlike in conventional semiconductors, both the chemical potential and the band gap in bilayer graphene (BLG) can be tuned via application of external electric field. Among numerous device implications, this property also designates BLG as…
We present a computationally efficient framework for predicting the excited-state properties of thermally activated delayed fluorescence (TADF) emitters, integrating extended tight-binding (\xtb), simplified Tamm-Dancoff approximation…
The controlled manipulation of the charge carrier concentration in nanometer thin layers is the basis of current semiconductor technology and of fundamental importance for device applications. Here we show that it is possible to induce a…
In this paper we demonstrate, for the first time, selective thermal emitters based on metamaterials perfect absorbers. We experimentally realize a narrow band mid-infrared (MIR) thermal emitter. Multiple metamaterial sublattices further…
The Transition Edge Sensor is extremely sensitive to the change of temperature, combined with the high-Z metal of a certain thickness, it can realize the high energy resolution measurement of particles such as X-rays. X-rays with energies…
We derive the photovoltaic conversion efficiency limit for two-terminal tandem solar cells with a perovskite top cell and silicon bottom cell with an embedded spectrum splitter. For large-bandgap top-cells a spectrum splitter strongly…
We describe the electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays fabricated on doped semiconductor substrates. The hybrid metal-semiconductor forms a Schottky diode structure, where the…
We report on multiterminal measurements in a ballistic bilayer graphene (BLG) channel where multiple spin and valley-degenerate quantum point contacts (QPCs) are defined by electrostatic gating. By patterning QPCs of different shapes and…
The embedding of tunable quantum emitters in a photonic bandgap structure enables the control of dissipative and dispersive interactions between emitters and their photonic bath. Operation in the transmission band, outside the gap, allows…
We have used a photothermal technique, in which chopped light heats the front surface of a small ( ~ 1 mm2) sample and the chopping frequency dependence of thermal radiation from the back surface is measured with a liquid nitrogen cooled…
The semiconducting half Heusler compound YPtSb was predicted theoretically to be capable of changing into topological insulator under proper strain. In this work, p type semiconducting half-Heusler YPtSb thin films were prepared by…
At the ultra-thin limit below 20 nm, a film's electrical conductivity, thermal conductivity, or thermoelectricity depends heavily on its thickness. In most studies, each sample is fabricated one at a time, potentially leading to…