Related papers: Semiconductor-based selective emitter with sharp c…
We report electrowetting on a semiconductor using of a mercury droplet resting on a silicon surface. The effect is demonstrated using commercial n-type and p-type single-crystal (100) silicon wafers of different doping levels. The…
Band-selective absorption and emission of thermal radiation in the infrared are of interest due to applications in emissivity coatings, infrared sensing, thermo-photovoltaics and solar energy harvesting. The broadband nature of thermal…
We present a tight-binding (TB) model and $\mathbf{k\cdot p}$ theory for electrons in monolayer and few-layer InSe. The model is constructed from a basis of all $s$ and $p$ valence orbitals on both indium and selenium atoms, with…
The properties of a semiconductor get drastically modified when the crystal point group symmetry is broken under an arbitrary strain. We investigate the family of semiconductors consisting of GaAs, GaSb, InAs and InSb, considering their…
We report on generation of pulsed broadband terahertz radiation utilizing the inverse spin Hall effect in Fe/Pt bilayers on MgO and sapphire substrates. The emitter was optimized with respect to layer thickness, growth parameters,…
In the present work, Cs aberration corrected and monochromated scanning transmission electron microscopy electron energy loss spectroscopy STEM-EELS has been used to explore experimental set-ups that allows bandgaps of high refractive index…
Broadband, efficient and fast conversion of light to electricity is crucial for sensing and clean energy. Here we reveal the largest observed bulk photo-voltaic effect (BPVE), an intrinsic mechanism predicted to be ultrafast and exceed the…
We present the theoretical basis for a new photoemission regime, transient work function gating (TWFG), that temporally and energetically gates photoemission and produces near-threshold photoelectrons with thermally limited emittance,…
Temperature and fluence dependence of the 1.55-eV optical transient reflectivity in BaFe$_{2}$(As$_{1-x}$P$_{x}$)$_{2}$ was measured and analysed in the low and high excitation density limit. The effective magnitude of the superconducting…
All spectrometers rely on some mechanism to achieve spectral selectivity; common examples include gratings, prisms, and interferometers with moving mirrors. We experimentally demonstrated and validated a spectroscopic technique -- here…
Laser-induced Terahertz (THz) Emission Spectroscopy (TES) has demonstrated its potential utility in the realm of Metal-Oxide-Semiconductor (MOS) devices as an expedient and noncontact estimation methodology. Owing to its discerning response…
Single photon emitters play a central role in many photonic quantum technologies. A promising class of single photon emitters consists of atomic color centers in wide-bandgap crystals, such as diamond silicon carbide and hexagonal boron…
Controlling the directionality of emitted far-field thermal radiation is a fundamental challenge in contemporary photonics and materials research. While photonic strategies have enabled angular selectivity of thermal emission over narrow…
The terahertz spectral regime, ranging from about 0.1 to 15 THz, is one of the least explored yet most technologically transformative spectral regions. One current challenge is to develop efficient and compact terahertz emitters/detectors…
Electronic metadevices leveraging sub-wavelength metallic features have shown great potential for high-frequency switching. Theoretical analysis based on a one-dimensional (1D) model indicates that reducing the size of subwavelength…
Violet phosphorus (VP), the most stable phosphorus allotrope, is a van der Waals semiconductor that can be used to construct $\textit{p}$-type nanodevices. Recently, high-quality VP crystals have been synthesized while a deep insight into…
Adoption of terahertz technologies is hindered by the lack of cost-effective THz sources. Here we demonstrate a fundamentally new way to generate and control THz radiation, via spatio-temporal emissivity modulation. By patterning the…
Pumping n-type GaAs and InSb with ultrafast THz pulses having intensities higher than 150 MW/cm2 shows strong free carrier absorption saturation at temperatures of 300 K and 200 K respectively. If the energy imparted to the carriers exceeds…
We report a photoluminescence study of high-quality Ge samples at temperatures 12 K $\leq$ T $\leq$ 295 K, over a spectral range that covers phonon-assisted emission from the indirect gap (between the lowest conduction band at the L point…
Semiconducting field emitters present some interesting features (e.g.; self-limited electron emission) for both scientific interest and industrial applications. The analysis of experimental results and device design has been restrained by…