Pulsed Electroluminescence in a Dopant-free Gateable Semiconductor
Mesoscale and Nanoscale Physics
2025-06-24 v2
Abstract
We report on a stable form of pulsed electroluminescence in a dopant-free direct bandgap semiconductor heterostructure which we coin the tidal effect. Swapping an inducing gate voltage in an ambipolar field effect transistor allows incoming and outgoing carriers of opposite charge to meet and recombine radiatively. We develop a model to explain the carrier dynamics that underpins the frequency response of the pulsed electroluminescence intensity. Higher mobilities enable larger active emission areas than previous reports, as well as stable emission over long timescales.
Cite
@article{arxiv.2407.12714,
title = {Pulsed Electroluminescence in a Dopant-free Gateable Semiconductor},
author = {S. R. Harrigan and F. Sfigakis and L. Tian and N. Sherlekar and B. Cunard and M. C. Tam and H. -S. Kim and Z. Wasilewski and M. E. Reimer and J. Baugh},
journal= {arXiv preprint arXiv:2407.12714},
year = {2025}
}
Comments
Main text: 7 pages, 8 figures