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This letter reports a temperature-dependent limit for the subthreshold swing in MOSFETs that deviates from the Boltzmann limit at deep-cryogenic temperatures. Below a critical temperature, the derived limit saturates to a value that is…

Mesoscale and Nanoscale Physics · Physics 2019-12-06 Arnout Beckers , Farzan Jazaeri , Christian Enz

We report on an industry-grade CMOS-compatible qubit fabrication approach using a CMOS pilot line, enabling a yield of functional devices reaching 92.8 %, with a resistance spread evaluated across the full wafer 200 mm diameter of 12.4 %…

We report experimental demonstration of the feasibility of reaching temperatures below 1 mK using cryogen-free technology. Our prototype system comprises an adiabatic nuclear demagnetisation stage, based on hyperfine-enhanced nuclear…

Instrumentation and Detectors · Physics 2015-06-16 Graham Batey , Andrew Casey , Michael Cuthbert , Anthony Matthews , John Saunders , Aya Shibahara

A scaled-up quantum computer will require a highly efficient control interface that autonomously manipulates and reads out large numbers of qubits, which for solid-state implementations are usually held at millikelvin (mK) temperatures.…

On-chip refrigeration at cryogenic temperatures is becoming an important requirement in the context of quantum technologies and nanoelectronics. Ferroic materials with enhanced electrocaloric effects at phase transitions are good material…

Materials Science · Physics 2024-03-28 Jalaja M A , Shubham Kumar Parate , Binoy Krishna De , Sai Dutt K , Pavan Nukala

Kink effect is a large obstacle for the cryogenic model of inversion-type bulk silicon MOSFET devices. This letter used two methods to correct the kink effect: the modified evolutionary strategy (MES) and dual-model modeling (BSIM3v3 and…

Applied Physics · Physics 2021-04-20 Tengteng Lu , Yuanke Zhang , Yujing Zhang , Jun Xu , Guoping Guo , Chao Luo

We present a cryogenic microwave noise source with a characteristic impedance of 50 $\Omega$, which can be installed in a coaxial line of a cryostat. The bath temperature of the noise source is continuously variable between 0.1 K and 5 K…

Silicon technology offers the enticing opportunity for monolithic integration of quantum and classical electronic circuits. However, the power consumption levels of classical electronics may compromise the local chip temperature and hence…

Mesoscale and Nanoscale Physics · Physics 2025-07-18 Mathieu de Kruijf , Grayson M. Noah , Alberto Gomez-Saiz , John J. L. Morton , M. Fernando Gonzalez-Zalba

We measure quantum and thermal phase-slip rates using the standard deviation of the switching current in superconducting nanowires at high bias current. Our rigorous quantitative analysis provides firm evidence for the presence of quantum…

Superconductivity · Physics 2015-06-04 T. Aref , A. Levchenko , V. Vakaryuk , A. Bezryadin

Large-scale superconducting quantum computers require massive numbers of high-performance cryogenic low-noise amplifiers (cryo-LNA) for qubit readout. Here we present a C-Band monolithic microwave integrated circuit (MMIC) cryo-LNA for this…

We report record performance for black phosphorus p-MOSFETs. The devices have locally patterned back gates and 20-nm-thick HfO2 gate dielectrics. Devices with effective gate length, Leff = 1.0 um display extrinsic transconductance, gm, of…

Mesoscale and Nanoscale Physics · Physics 2014-10-01 Nazila Haratipour , Matthew C. Robbins , Steven J. Koester

We report the low temperature current-voltage (I-V) characteristics studies in quasi-one dimensional conducting polymer nanofibers. We find a threshold voltage Vt below which little current flows at temperatures below 30-40 K. For V > Vt…

Soft Condensed Matter · Physics 2009-11-11 A. N. Aleshin , H. J. Lee , S. H. Jhang , H. S. Kim , K. Akagi , Y. W. Park

Low-loss waveguides are required for quantum communication at distances beyond the chip-scale for any low-temperature solid-state implementation of quantum information processors. We measure and analyze the attenuation constant of…

Mesoscale and Nanoscale Physics · Physics 2018-03-30 P. Kurpiers , T. Walter , P. Magnard , Y. Salathe , A. Wallraff

Silicon-On-Insulator nanowire transistors of very small dimensions exhibit quantum effects like Coulomb blockade or single-dopant transport at low temperature. The same process also yields excellent field-effect transistors (FETs) for…

Mesoscale and Nanoscale Physics · Physics 2015-03-16 P. Clapera , X. Jehl , A. Corna , S. J. Ray , M. Sanquer , A. Valentian , S. Barraud

Fast feedback from cryogenic electrical characterization measurements is key for the development of scalable quantum computing technology. At room temperature, high-throughput device testing is accomplished with a probe-based solution,…

We report on the fabrication and characterization of microSQUID devices based on nanoscale vanadium/copper/vanadium Josephson weak links. Magnetically driven quantum interference patterns have been measured for temperatures in the 0.24 - 2…

Mesoscale and Nanoscale Physics · Physics 2013-09-06 Alberto Ronzani , Matthieu Baillergeau , Carles Altimiras , Francesco Giazotto

In this work, we investigate the behavior of Al2O3/TiO2-x cross-point memristors in cryogenic environment. We report successful resistive switching of memristor devices from 300 K down to 1.5 K. The I-V curves exhibit negative differential…

Quantum physics emerge and develop as temperature is reduced. Although mesoscopic electrical circuits constitute an outstanding platform to explore quantum behavior, the challenge in cooling the electrons impedes their potential. The strong…

Mesoscale and Nanoscale Physics · Physics 2016-10-13 Z. Iftikhar , A. Anthore , S. Jezouin , F. D. Parmentier , Y. Jin , A. Cavanna , A. Ouerghi , U. Gennser , F. Pierre

Low-temperature electronic systems require electrical leads which have low electrical resistance to provide bias current I without excessive voltage drop V. But proper cryogenic design also requires high thermal resistance to maintain a…

Superconductivity · Physics 2009-11-11 Alan M. Kadin

The tremendous progress in Metal Oxide Semiconductor (MOS) technology has been a direct consequence of device scaling for past several decades. But as we have entered the nanometer era many problems related to leakage currents and other…

Applied Physics · Physics 2019-11-12 Raja N Mir