Related papers: Anisotropic magnetoresistance and memory effect in…
Magnetotransport measurements are a popular way of characterizing the electronic structure of topological materials and often the resulting datasets cannot be described by the well-known Drude model due to large, non-parabolic…
A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a non-magnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the…
Recently, negative longitudinal and positive in-plane transverse magnetoresistance have been observed in most topological Dirac/Weyl semimetals, and some other topological materials. Here we present a quantum theory of intrinsic…
The exchange bias effect is an essential component of magnetic memory and spintronic devices. Whereas recent research has shown that anisotropies perpendicular to the device plane provide superior stability against thermal noise, it has…
Transport properties in the Kondo regime of a nanosystem displaying uniaxial magnetic anisotropy (such as a magnetic molecule, magnetic adatom or quantum dot coupled to a localized magnetic moment) are analyzed theoretically. In particular,…
Antiferromagnets have been generating intense interest in the spintronics community, owing to their intrinsic appealing properties like zero stray field and ultrafast spin dynamics. While the control of antiferromagnetic (AFM) orders has…
To date, magnetic proximity effect (MPE) has only been conclusively observed in ferromagnet (FM) based systems. We report the observation of anomalous Hall effect and anisotropic magnetoresistance in angular dependent magnetoresistance…
We study conductivity of strongly disordered amorphous antimony films under high bias voltages. We observe non-linear current-voltage characteristic, where the conductivity value at zero bias is one of two distinct values, being determined…
Magneto-resistance (MR) of Bi$_2$Se$_3$ nanoribbons is studied over a broad range of temperature ($T$=300K-2K) and under various magnetic field ($B$) orientations. The MR is strongly anisotropic with the perpendicular MR much larger than…
We reconsider the theory of magnetoresistance in hopping semiconductors. First, we have shown that the random potential of the background impurities affects significantly preexponential factor of the tunneling amplitude which becomes to be…
Electrical resistivities can be different for charge currents travelling parallel or perpendicular to the magnetization in magnetically ordered conductors or semiconductors, resulting in the well-known planar Hall effect and anisotropic…
We report on nonlinear transport measurements in a GaAs/AlGaAs quantum well exhibiting a colossal negative magnetoresistance effect. Under applied dc bias, the magnetoresistance becomes nonmonotonic, exhibiting distinct extrema that move to…
We consider the electronic transport in bounded semiconductors in the presence of an external magnetic field. Taking into account appropriate boundary conditions for the current density at the contacts, a change in the magnetoresistance of…
We report a transport study on Pd$_3$In$_7$ which displays multiple Dirac type-II nodes in its electronic dispersion. Pd$_3$In$_7$ is characterized by low residual resistivities and high mobilities, which are consistent with Dirac-like…
We study a 2D mesoscopic ring with an anisotropic effective mass considering surface quantum confinement effects. Consider that the ring is defined on the surface of a cone, which can be controlled topologically and mapped to the 2D ring in…
Conventional and spin-related thermoelectric effects in electronic transport through a nanoscopic system exhibiting magnetic anisotropy $-$with both uniaxial and transverse components$-$ are studied theoretically in the linear response…
Expanding nanomagnetism and spintronics into three dimensions (3D) offers great opportunities for both fundamental and technological studies. However, probing the influence of complex 3D geometries on magnetoelectrical phenomena poses…
Large magnetoresistance effect controlled by electric field rather than magnetic field or electric current is a preferable routine for designing low power consumption magnetoresistance-based spintronic devices. Here we propose an…
Anisotropic magnetoresistance (AMR) has a crucial feature for developing highly sensitive sensors and innovative memory devices. While extensively studied in bulk materials, AMR effects in these materials are typically weak. Recent…
Anisotropic magnetoresistance (AMR) is a well-known magnetoelectric coupling phenomenon, commonly exhibiting two-fold symmetry relative to the magnetic field. In this study, we reveal the existence of high-order AMRs in two-dimensional (2D)…