Related papers: Anisotropic magnetoresistance and memory effect in…
The realization of four-fold anisotropic magnetoresistance (AMR) in novel 3d-5d heterostructures has boosted major efforts in antiferromagnetic spintronics. However, despite the potential of incorporating strong spin-orbit coupling, only…
During the study of magnetoresistivity in La(1-x)Ca(x)MnO(3) it was found that after cycling of the magnetic field, some kind of magnetic field memory effect was observed. For La0.5Ca0.5MnO3 after cycling of the magnetic field to 13T and…
The magnetoresistance (MR) of a material is typically insensitive to reversing the applied field direction and varies quadratically with magnetic field in the low-field limit. Quantum effects [1], unusual topological band structures [2],…
The family of materials defined as ZrSiX (X = S, Se, Te) has been established as Dirac node-line semimetals, and subsequent study is urgent to exploit the promising application of unusual magnetoresistance property. In this work, we…
We develop a theory of the anisotropic magnetoresistance (AMR) effects of arbitrary directions of current and magnetization for ferromagnets. Here, we use the electron scattering theory with the $s$--$s$ and $s$--$d$ scattering processes,…
First-generation magnetic random access memories based on anisotropic magnetoresistance required magnetic fields for both writing and reading. Modern all-electrical read/write memories use instead non-relativistic spin-transport connecting…
Anisotropic magnetoresistance (AMR), originating from spin-orbit coupling (SOC), is the sensitivity of the electrical resistance in magnetic systems to the direction of spin magnetization. Although this phenomenon has been experimentally…
Anisotropic magnetoresistance (AMR) arises from symmetry lowering of the conductivity tensor induced by magnetic order. In simple ferromagnets, AMR is a relativistic effect, relying on spin-orbit interaction (SOC). Here, we demonstrate that…
We address scatterings of spin waves off uncorrelated defects in two-dimensional (2D) easy-axis antiferromagnet (AFM) insulators. Although an onsite magnetic anisotropy leads gapped Goldstone modes, such that a long range (AFM) order can be…
Phenomenology similar to the nonreciprocal charge transport violating Onsagers reciprocity relations can develop in directionally inhomogeneous conducting films with nonuniform Hall coefficient along the current trajectory. The effect is…
In the last decade, nanoscale resistive devices with memory have been the subject of intense study because of their possible use in brain-inspired computing. However, operational endurance is one of the limiting factors in the adoption of…
Single-molecule magnets weakly coupled to two ferromagnetic leads act as memory devices in electronic circuits---their response depends on history, not just on the instantaneous applied voltage. We show that magnetic anisotropy introduces a…
Progress in (Ga,Mn)As lithography has recently allowed us to realize structures where unique magnetic anisotropy properties can be imposed locally in various regions of a given device. We make use of this technology to fabricate a device in…
We present three-dimensional magnetohydrodynamic simulations of the nonlinear evolution of the magnetorotational instability (MRI) with a non-zero Ohmic resistivity. The properties of the saturated state depend on the initial magnetic field…
Colossal magnetoresistance (CMR) is commonly observed in magnetic semiconductors when an external magnetic field is applied, usually accompanied by anomalous resistivity peaks or humps which were previously considered as evidence of a…
Searching for novel antiferromagnetic materials with large magnetotransport response is highly demanded for constructing future spintronic devices with high stability, fast switching speed, and high density. Here we report a colossal…
Colossal magnetoresistance (CMR) is a rare phenomenon in which the electronic resistivity of a material can be decreased by orders of magnitude upon application of a magnetic field. Such an effect could be the basis of the next generation…
The magnetoresistance of classical two-dimensional electrons scattered by randomly distributed impurities is investigated by numerical simulation. At low magnetic fields, we find for the first time a negative magnetoresistance proportional…
We present a model for the positive extreme magnetoresistance (XMR), recently observed in a plethora of metallic systems, such as PtSn$_4$, PtBi$_2$, PdCoO$_2$, WTe$_2$, NbSb$_2$, NbP, TaSb$_2$, LaSb, LaBi, ZrSiS and MoTe$_2$. The model is…
The effect of electric field, applied on systems in the nanoscale regime has attracted a lot of research in recent times. We highlight some of the recent results in the field of single molecule electronics and then move on to focus on some…