Related papers: Anisotropic magnetoresistance and memory effect in…
Lord Kelvin with his discovery of the anisotropic magnetoresistance (AMR) phenomenon in Ni and Fe was 70 years ahead of the formulation of relativistic quantum mechanics the effect stems from, and almost one and a half century ahead of…
Tilted off-plane magnetic anisotropy induces two unusual characteristic magnetotransport phenomena: extraordinary Hall effect in the presence of an in-plane magnetic field, and non-monotonic anisotropic magnetoresistance in the presence of…
The two-dimensional electron system in (110)Al$_2$O$_{3-\delta}$/SrTiO$_3$ heterostructures displays anisotropic electronic transport. Largest and lowest conductivity and electron mobility $\mu$ are observed along the $[001]$ and…
Density-functional calculations are performed to explore magnetoelectric effects originating from the influence of an external electric field on magnetic properties of the Fe/MgO(001) interface. It is shown that the effect on the interface…
CuMnAs with perpendicular magnetic anisotropy is proposed as an active material for antiferromagnetic memory. Information can be stored in the antiferromagnetic domain state, while writing and readout can rely on the existence of the…
We study the transport properties of a 2D electron gas in narrow GaAs quantum wells with AlAs/GaAs superlattice barriers. It is shown that the anisotropic positive magnetoresistance observed in selectively doped semiconductor structures in…
Two-component systems with equal concentrations of electrons and holes exhibit non-saturating, linear magnetoresistance in classically strong magnetic fields. The effect is predicted to occur in finite-size samples at charge neutrality in…
We present a model which provides a plausible explanation of the effect of zero-resistance and zero-conductance states in two-dimensional electron systems subjected to a magnetic field and irradiated with microwaves observed in a number of…
Correlated electron systems, particularly iron-based superconductors, are extremely sensitive to strain, which inevitably occurs in the crystal growth process. Built-in strain of this type has been proposed as a possible explanation for…
Large positive (P) magnetoresistance (MR) has been observed in parallel magnetic fields in a single 2D layer in a delta-doped GaAs/AlGaAs heterostructure with a variable-range-hopping (VRH) mechanism of conductivity. Effect of large PMR is…
We investigate the magneto-conductance (MC) anisotropy in the variable range hopping regime, caused by quantum interference effects in three dimensions. When no spin-orbit scattering is included, there is an increase in the localization…
We investigate magnetoresistance phenomena associated with the magnetization hard-axis collapse in polycrystalline Co thin films. Transport measurements reveal that, for specific orientations of the applied magnetic field, the system…
The propensity of some materials and multilayers to have a magnetic field dependent resistance, called magnetoresistance, has found commercial applications such as giant magnetoresistance harddisk read heads. But magnetoresistance can also…
The magneto-impedance (MI) in amorphous ribbon of nominal composition Fe73.5Nb3Cu1Si13.5B9 has been measured at 1MHz and at room temperature for different configurations of exciting a.c and biasing d.c. fields. A large drop in both…
Extraordinary magnetoresistance (EMR) is a geometric magnetoresistance effect occurring in hybrid devices consisting of a high-mobility material joined by a metal. The change in resistance can exceed 107% at room temperature when a magnetic…
The resistivity as a function of temperature, magnetic field and its orientation for atomically flat SrTiO3\LaAlO3 interfaces with carrier densities of ~3*10^13 cm^-2 is reported. At low magnetic fields superconductivity is observed below…
We investigate anisotropy in Fourier-domain speckle correlations associated with the optical memory effect in disordered scattering media. Within a single scattering framework, we show that while the conventional memory effect constrains…
We report on giant positive magnetoresistance effect observed in VOx thin films, epitaxially grown on SrTiO3 substrate. The MR effect depends strongly on temperature and oxygen content and is anisotropic. At low temperatures its magnitude…
In ferromagnetic nanostructures, the ballistic anisotropic magnetoresistance (BAMR) is a change in the ballistic conductance with the direction of magnetization due to spin-orbit interaction. Very recently, a directional dependent ballistic…
Scientific study of the effect of structural memory of nonequilibrium defective solids about the processing in magnetic field (the magnetic structural effect (MSE) was continued in this paper. The study was aimed to reveal the universal…