Related papers: Precise, Sub-Nanosecond, and High-Voltage Switchin…
The field effect transistors (FETs) exhibited ultrahigh responsivity (107 A/W) to infrared light with great improvement of mobility in graphene / PbS quantum dot (QD) hybrid. These reported transistors are either unipolar or depletion mode…
We demonstrate the back-end integration of broadband, high-NA GaN micro-lenses by micro-assembly onto non-native semiconductor substrates. We developed a highly parallel micro-fabrication process flow to suspend micron scale plano-convex…
A 16-channel optical phased array is fabricated on a gallium arsenide photonic integrated circuit platform with a low-complexity process. Tested with a 1064 nm external laser, the array demonstrates 0.92{\deg} beamwidth, 15.3{\deg}…
To develop effective thermal management strategies for GaN transistors, it is essential to accurately predict the device junction temperature. Since the width of the heat generation in the devices is comparable to phonon mean free paths of…
Self-heating is a severe problem for high-power GaN electronic and optoelectronic devices. Various thermal management solutions, e.g. flip-chip bonding or composite substrates have been attempted. However, temperature rise still limits…
With photoelectrochemical water splitting being one of the most promising approaches for clean energy production and storage, the search for efficient photoelectrode materials is greater than ever. Gallium phosphide (GaP) is a…
We report on the design and demonstration of ultra-wide bandgap AlGaN polarization-graded field effect transistors with ultra-thin channels to enable excellent current density and high-frequency performance while significantly reducing…
Programmable integrated photonics aims to replicate the versatility of field-programmable gate arrays in the optical domain. However, scaling these systems has been prevented by the high power consumption and thermal crosstalk of…
In this paper we report on the development of a fast high-voltage switch, which is based on two enhancement mode N-channel Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistors in push-pull configuration. The switch is capable…
A series of simple and low-cost devices for switching, amplifying, and chirping diode lasers based on current modulation are presented. Direct modulation of diode laser currents is rarely sufficient to establish precise amplitude and phase…
In this paper, we investigated a gate driver using a GaN HEMT push-pull configuration for the high-frequency hard switching of a SiC power MOSFET. Low on-resistance and low input capacitance of GaN HEMTs are suitable for a high-frequency…
Many channel arbitrary pulse sequence generation is required for the electro-optic reconfiguration of optical waveguide networks in Lithium Niobate. Here we describe a scalable solution to the requirement for mid-power bipolar parallel…
The scalability of quantum photonic integrated circuits opens the path towards large-scale quantum computing and communication. To date, this scalability has been limited by the stochastic nature of the quantum light sources. Moreover,…
We perform electric double-layer gating experiments on thin films of niobium nitride. Thanks to a cross-linked polymer electrolyte system of improved efficiency, we induce surface charge densities as high as $\approx 2.8 \times…
Low phase noise lasers based on the combination of III-V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic…
Refractory materials exhibit high damage tolerance, which is attractive for the creation of nanoscale field-emission electronics and optoelectronics applications that require operation at high peak current densities and optical intensities.…
Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS2/n-GaN) heterojunction diodes are reported. Devices were fabricated on high-quality, large-area p-MoS2…
Transient field-resolved spectroscopy enables studies of ultrafast dynamics in molecules, nanostructures, or solids with sub-cycle resolution, but previous work has so far concentrated on extracting the dielectric response at frequencies…
The recently discovered electrical-induced switching of antiferromagnetic (AF) materials that have spatial inversion asymmetry has enriched the field of spintronics immensely and opened the door for the concept of antiferromagnetic MRAM.…
The nanowire-supported quantum dot (NWQD) of GaN is an unconventional nanostructure, which is extremely promising for realization of UV photonics in general, and room-temperature single photon generation, in particular. While GaN-NWQDs have…