Related papers: Precise, Sub-Nanosecond, and High-Voltage Switchin…
Nanoplasmonics has recently experienced explosive development with many novel ideas and dramatic achievements in both fundamentals and applications. The spaser has been predicted and observed experimentally as an active element -- generator…
A broad TCAD simulation analysis of a monolithic common drain bidirectional GaN HEMT was performed. We used gate-to-gate distances of 4 microns and 6 microns for the devices optimized with two field plates. The breakdown voltages were 675V…
Electrical properties of contact to p-type nitride semiconductor devices, based on gallium nitride were simulated by ab initio and by drift-diffusion calculations. The contact electric properties are shown to be dominated by electron…
We describe an ultrafast time resolved pump-probe spectroscopy setup aimed at studying the switching of nanophotonic structures. Both fs pump and probe pulses can be independently tuned over broad frequency range between 3850 and 21050…
High-quality N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy. The room-temperature current-voltage characteristics reveal a high on/off current ratio of 10^11 at 4 V…
The excitation efficiency and external luminescence quantum efficiency of trivalent Eu3+ ions doped into gallium nitride (GaN) was studied under optical and electrical excitation. For small pump fluences it was found that the excitation of…
Thanks to intrinsically short electronic relaxation on the ps time scale, III-V semiconductor unipolar devices are ideal candidates for ultrahigh-speed operation at mid-infrared frequencies. In this work, antenna-coupled, GaAs-based multi…
While vertical GaN-on-silicon architectures promise a transformative leap in cost-effective power electronics and high-resolution micro-LEDs, their deployment remains bottlenecked by the high electrical resistance of conventional epitaxial…
We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulator-semiconductor (MIS) capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing…
We present a concept for an imaging gamma-ray polarimeter operating from ~50 MeV to ~1 GeV. Such an instrument would be valuable for the study of high-energy pulsars, active galactic nuclei, supernova remnants, and gamma-ray bursts. The…
The guiding and control of ultrahigh flux, femtosecond relativistic electron pulses through solid density matter is of great importance for many areas of high energy density science. Efforts so far include the use of magnetic fields…
We present mirror and beamsplitter pulse designs that improve the fidelity of atom interferometry and increase its tolerance of systematic inhomogeneities. These designs are demonstrated experimentally with a cold thermal sample of…
In this article, we estimate hydrostatic stress developed in gallium ion implanted gallium nitride epitaxial layers using Raman measurements. We have calculated deformation potential constants for $E_2$(high) mode in these epi-layers. The…
One of the major challenges in communication, radar, and electronic warfare receivers arises from nearby device interference. The paper presents a 2-6 GHz GaN LNA front-end with onboard sensing, processing, and feedback utilizing…
Nanomechanical oscillators have been employed as transducers to measure force, mass and charge with high sensitivity. They are also used in opto- or electromechanical experiments with the goal of quantum control and phenomena of mechanical…
Novel non-volatile memory devices based on ferroelectric thin films represent a promising emerging technology that is ideally suited for neuromorphic applications. The physical switching mechanism in such films is the nucleation and growth…
We demonstrate a small-footprint electromechanical phase shifter with a compact active length of $10\:\mu \text{m}$ fabricated on a suspended GaAs membrane, offering versatile integration with quantum-dot single-photon sources. The phase…
We report a photon number resolving detector using two-dimensional electron gas (2DEG) based transistors. When the photon pulses impinge on the absorption region, the generated phonons dissipate ballistically in the 2DEG toward the trench…
N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk wafers by plasma-assisted molecular beam epitaxy growth. The current-voltage characteristics show high-quality rectification and electroluminescence characteristics with…
Self-assembled functionalized nano particles are at the focus of a number of potential applications, in particular for molecular scale electronics devices. Here we perform experiments of self-assembly of 10 nm Au nano particles (NPs),…