Related papers: Precise, Sub-Nanosecond, and High-Voltage Switchin…
We investigate the dependence of charge transfer on the intensity of driving laser field when SiO2 crystal is irradiated by an 800 nm laser. It is surprising that the direction of charge transfer undergoes a sudden reversal when the driving…
Rare-earth based lasing action in GaN semiconductor at the telecommunication wavelength of 1.5 micron has been demonstrated at room temperature. We have reported the stimulated emission under the above bandgap excitation from Er doped GaN…
Thick GEM-like (THGEM) gaseous electron multipliers are made of standard printed-circuit board perforated with sub-millimeter diameter holes, etched at their rims. Effective gas multiplication factors of 100000 and 10000000 and fast pulses…
We improve by a factor of 4-20 the energy accuracy of the strongest soft X-ray transitions of Fe XVII ions by resonantly exciting them in an electron beam ion trap with a monochromatic beam at the P04 beamline of the PETRA III synchrotron…
Photon detectors like the ALICE Calorimeters are vulnerable to both optical and electrical crosstalk between detector channels belonging to the same particle event. In order to quantify the crosstalk generated by a single channel on its…
GeSn alloys have been regarded as a potential lasing material for a complementary metal-oxide-semiconductor (CMOS)-compatible light source. Despite their remarkable progress, all GeSn lasers reported to date have large device footprints and…
Gallium selenide (GaSe) is a 2D material with a thickness-dependent gap, strong non-linear optical coefficients and uncommon interband optical selection rules, making it interesting for optoelectronic and spintronic applications. In this…
Semiconductor quantum dots are useful for controlling and observing quantum states and can also be used as sensors for reading out quantum bits and exploring local electronic states in nanostructures. However, challenges remain for the…
Due to its high charge carrier mobility, broadband light absorption, and ultrafast carrier dynamics, graphene is a promising material for the development of high-performance photodetectors. Graphene-based photodetectors have been…
Detailed understanding of spin dynamics in magnetic nanomaterials is necessary for developing ultrafast, low-energy and high-density spintronic logic and memory. Here, we develop micromagnetic models and analytical solutions to elucidate…
Strain engineering in semiconductor transistor devices has become vital in the semiconductor industry due to the ever increasing need for performance enhancement at the nanoscale. Raman spectroscopy is a non-invasive measurement technique…
In MicroPattern Gas Detectors (MPGD) when the pixel size is below 100 micron and the number of pixels is large (above 1000) it is virtually impossible to use the conventional PCB read-out approach to bring the signal charge from the…
We have developed an avalanche transistor-based pulse generator for driving the photocathode of an image intensifier, which comprises a mainly capacitive load on the order of 100 pF. The circuit produces flat-top pulses with rise time of 2…
Mechanical resonators can act as excellent intermediaries to interface single photons in the microwave and optical domains due to their high quality factors. Nevertheless, the optical pump required to overcome the large energy difference…
Thick metamorphic buffers are perceived to be indispensable for the heteroepitaxial integration of III-V semiconductors on silicon substrates with large thermal expansion and lattice mismatches. However, III-nitride buffers in conventional…
In this work, we present conception and study of gallium nitride (GaN) nanostructures on a gallium arsenide (GaAs) substrate with (111)A orientation. The nanostructures were designed by GaN droplet epitaxy and studied in-situ by X-ray…
Graphene-based electromechanical resonators have attracted much interest recently because of the outstanding mechanical and electrical properties of graphene and their various applications. However, the coupling between mechanical motion…
Motivated by potential transformative applications of nanoelectronic circuits that incorporate superconducting elements, and by the advantages of integrating these elements in a silicon materials platform, we investigate the properties of…
We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and…
We develop a theory of energy relaxation in semiconductors and insulators highly excited by the long-acting external irradiation. We derive the equation for the non-equilibrium distribution function of excited electrons. The solution for…