Related papers: Device Variability Analysis for Memristive Materia…
Researchers and designers are facing problems with memory and power walls, considering the pervasiveness of Von-Neumann architecture in the design of processors and the problems caused by reducing the dimensions of deep sub-micron…
The commercialization of non-volatile memories based on ferroelectric transistors (FeFETs) has remained elusive due to scaling, retention, and endurance issues. Thus, it is important to develop accurate characterization tools to quantify…
This paper reports on detailed measurements of the performance of Resistive Plate Chambers in a proton beam with variable intensity. Short term effects, such as dead time, are studied using consecutive events. On larger time scales, for…
In the last decade, a 2-terminal passive circuit element called a memristor has been developed for non-volatile resistive random access memory and has more recently shown promise for neuromorphic computing. Compared to flash memory,…
We present computer simulations of a simple bead-spring model for polymer melts with intramolecular barriers. By systematically tuning the strength of the barriers, we investigate their role on the glass transition. Dynamic observables are…
We report a detailed scaling analysis of resistivity \rho(T,n) measured for several high-mobility 2D electron systems in the vicinity of the 2D metal-insulator transition. We analyzed the data using the two parameter scaling approach and…
We present detailed simulations addressing recent electronic interference experiments, where a metallic gate is used to locally modify the Fermi wave-length of the charge carriers. Our numerical calculations are based on a solution of the…
We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that…
We propose a classification of measurement apparatuses based on their reliability and accessibility. Our notion of reliability parameterises the possibility of getting unexpected wrong results when using the apparatus in a given time…
The disc instability model successfully reproduces many of the observed properties of cataclysmic variables. However, additional ingredients such as mass-transfer variations, disc irradiation, stream-disc overflow, or inner-disc truncation…
Recording reliably extracellular neural activities isan essential prerequisite for the development of bioelectronicsand neuroprosthetic applications. Recently, a fully differential,2-stage, integrating pre-amplifier was proposed for…
In this work, a versatile mathematical framework for multi-state probabilistic modeling of Resistive Switching (RS) devices is proposed for the first time. The mathematical formulation of memristor and Markov jump processes are combined…
The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias…
The rise of transient faults in modern hardware requires system designers to consider errors occurring at runtime. Both hardware- and software-based error handling must be deployed to meet application reliability requirements. The level of…
This paper describes a new memristor crossbar architecture that is proposed for use in a high density cache design. This design has less than 10% of the write energy consumption than a simple memristor crossbar. Also, it has up to 4 times…
Image recognition tasks typically use deep learning and require enormous processing power, thus relying on hardware accelerators like GPUs and FPGAs for fast, timely processing. Failure in real-time image recognition tasks can occur due to…
This work introduces the use of multivariate global sensitivity analysis for assessing the impact of uncertain electric machine design parameters on efficiency maps and profiles. Contrary to the common approach of applying variance-based…
Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical…
We have extended our recent molecular-dynamic simulations of memristors to include the effect of thermal inhomogeneities on mobile ionic species appearing during operation of the device. Simulations show a competition between an attractive…
We theoretically study the effect of a material defect (material void) on switching errors associated with magneto-elastic switching of magnetization in elliptical magnetostrictive nanomagnets having in-plane magnetic anisotropy. We find…