Related papers: Device Variability Analysis for Memristive Materia…
Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the…
The memristor can be used as non volatile memory (NVM) and for emulating neuron behavior. It has the ability to switch between low resistance $R_{on}$ and high resistance values $R_{off}$, and exhibit the synaptic dynamic behaviour such as…
Memristive devices have shown great promise to facilitate the acceleration and improve the power efficiency of Deep Learning (DL) systems. Crossbar architectures constructed using these Resistive Random-Access Memory (RRAM) devices can be…
The class of memory circuit elements which comprises memristive, memcapacitive, and meminductive systems, is gaining considerable attention in a broad range of disciplines. This is due to the enormous flexibility these elements provide in…
Under normal operations, memristive devices undergo variability in time and space and have internal dynamics. Interplay of memory and stochastic signal processing in memristive devices makes them candidates for performing bio-inspired tasks…
The potential of memristive devices is often seeing in implementing neuromorphic architectures for achieving brain-like computation. However, the designing procedures do not allow for extended manipulation of the material, unlike CMOS…
The scalability of spin qubit devices is conditioned by qubit-to-qubit variability. Disorder in the host materials indeed affects the wave functions of the confined carriers, which leads to variations in their charge and spin properties.…
Compact models of memristors are essential for simulating large-scale neuromorphic systems, yet they often do not include description of complex dynamics like volatile relaxation and synaptic plasticity. We introduce a modular,…
Previously, we demonstrated hysteretic and persistent changes of resistivity in two-terminal electronic devices based on charge trapping and detrapping at immobile metastable defects [H. Yin, A. Kumar, J.M. LeBeau, and R. Jaramillo, Phys.…
Purpose: Magnetization transfer (MT) has been identified as the principal source of $T_1$ variability in the MRI literature. This study assesses the sensitivity of established $T_1$ mapping techniques to variations in the underlying MT…
We deduce a fully analytical model to predict the artifacts of the measuring device handles in Single Molecule Force Spectroscopy experiments. As we show, neglecting the effects of the handle stiffness can lead to crucial overestimation or…
Reproducing published deep learning papers to validate their conclusions can be difficult due to sources of irreproducibility. We investigate the impact that implementation factors have on the results and how they affect reproducibility of…
Time-over-threshold measurements of the output of a first order integration amplifier can be used as a cheap way to estimate the charge deposited on a wire in an MWPC. Even if the time scale of the first order system is seemingly much…
Memristors, initially introduced in the 1970s, have received increased attention upon successful synthesis in 2008. Considerable work has been done on modeling and applications in specific areas, however, very little is known on the…
This work investigates the variability of tungsten disulfide (WS$_2$)-based devices by experimental characterization in view of possible application in the field of hardware security. To this aim, a preliminary analysis was performed by…
Flash memory experiences adverse effects due to radiation. These effects can be raised in terms of doping, feature size, supply voltages, layout, shielding. The the operating point shift of the device forced to enter the logically-undefined…
Ferroelectric memristors are intensively studied due to their potential implementation in data storage and processing devices. In this work we show that the memristive behavior of metal/ferroelectric oxide/metal devices relies on the…
Networks with memristive devices are a potential basis for the next generation of computing devices. They are also an important model system for basic science, from modeling nanoscale conductivity to providing insight into the…
Non-volatile resistive switching, also known as memristor effect in two terminal devices, has emerged as one of the most important components in the ongoing development of high-density information storage, brain-inspired computing, and…
Since performance improvements of computers are stagnating, new technologies and computer paradigms are hot research topics. Memristor-based In-Memory Computing is one of the promising candidates for the post-CMOS era, which comes in many…