Related papers: Tunable spin-flop transition in artificial ferrima…
We report studies of exchange bias and coercivity in ferromagnetic Ni$_{81}$Fe$_{19}$ layers coupled to antiferromagnetic (AF) (0001), (11$\bar{2}$0), and (11$\bar{0}$2) $\alpha$-Fe$_2$O$_3$ layers. We show that AF spin configurations which…
Spintronics provides an efficient platform for realizing non-volatile memory and logic devices. In these systems, data is stored in the magnetization of magnetic materials, and magnetization is switched in the writing process. In…
Antiferromagnets naturally exhibit three obvious advantages over ferromagnets for memory device applications: insensitivity to external magnetic fields, much faster spin dynamics (~THz) and higher packing density due to the absence of any…
In the development of spin-based electronic devices, a particular challenge is the manipulation of the magnetic state with high speed and low power consumption. Although research has focused on the current-induced spin-orbit torque based on…
The classical and the quantum, spin $S=1/2, versions of the uniaxially anisotropic Heisenberg antiferromagnet on a square lattice in a field parallel to the easy axis are studied using Monte Carlo techniques. For the classical version,…
We study classical Heisenberg antiferromagnets with uniaxial exchange anisotropy and a cubic anisotropy term on simple cubic lattices in an external magnetic field using ground state considerations and extensive Monte Carlo simulations. In…
Antiferromagnetic MnPt exhibits a spin reorientation transition (SRT) as a function of temperature, and off-stoichiometric Mn-Pt alloys also display SRTs as a function of concentration. The magnetocrystalline anisotropy in these alloys is…
Resistivity measurements are widely exploited to uncover electronic excitations and phase transitions in metallic solids. While single crystals are preferably studied to explore crystalline anisotropies, these usually cancel out in…
Magnetization reversal of a perpendicular ferromagnetic free layer by spin-orbit torque (SOT) is an attractive alternative to spin-transfer torque (STT) switching in magnetic random-access memory (MRAM) where the write process involves…
Phase diagrams as a function of anisotropy D and magnetic field H are obtained for discommensurations and surface states for a model antiferromagnet in which $H$ is parallel to the easy axis. The surface spin-flop phase exists for all $D$.…
Nanopatterned magnetic thin films offer a platform for exploration of tailored magnetic properties such as emergent long-range order. A prominent example is artificial spin ice (ASI), where an arrangement of nanoscale magnetic elements,…
Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular…
Ultrafast electrical switching by current-induced staggered spin-orbit fields, with minimal risk of overshoot, is shown in layered easy-plane antiferromagnets with basal-plane biaxial anisotropy. The reliable switching is due to the…
We investigate the phases and phase-transitions in one-dimensional alternating mixed-spin (1/2-1) chain in the presence of both frustration and anisotropy. Frustration is introduced via next-nearest-neighbor interactions, while single-ion…
We carry out first-principles calculations which demonstrate the importance of the non-spin-conserving part of the spin-orbit interaction for the intrinsic anomalous Hall conductivity of ordered FePt alloys. The impact of this interaction…
We show that in suitable anisotropic ferromagnets, both stable and metastable ``tilted'' phases occur, in which the magnetization ${\vec M}$ makes an angle between zero and $180$ degrees with the externally applied ${\vec H}$. Tuning either…
Magnetic random-access memory (MRAM) driven by spin-transfer torque (STT) is a major contender for future memory applications. The energy dissipation involved in writing remains problematic, even with the advent of more efficient…
It has been shown that the spin Hall effect from heavy transition metals can generate sufficient spin-orbit torque and further produce current-induced magnetization switching in the adjacent ferromagnetic layer. However, if the…
The discovery of fascinating ways to control and manipulate antiferromagnetic materials have garnered considerable attention as an attractive platform to explore novel spintronic phenomena and functionalities. Layered antiferromagnets…
A noticeable magnetoresistive effect has been observed on ferromagnet/superconductor/ferromagnet (FSF) microbridges based on diluted ferromagnetic PdFe alloy containing as small as 1% magnetic atoms. Microstructuring of the FSF trilayers…