Robust Picosecond writing of a Layered Antiferromagnet by Staggered Spin-Orbit-Fields
Abstract
Ultrafast electrical switching by current-induced staggered spin-orbit fields, with minimal risk of overshoot, is shown in layered easy-plane antiferromagnets with basal-plane biaxial anisotropy. The reliable switching is due to the field-like torque, relaxing stringent requirements with respect to precision in the time-duration of the excitation pulse. We investigate the switching characteristics as a function of the spin-orbit field strength, pulse duration, pulse rise and fall time and damping by atomistic spin dynamics simulations and an effective equation of motion for the antiferromagnetic order-parameter. The condition, determining the critical spin-orbit field strength for switching is determined and we go on to show that robust picosecond writing is possible at feasible current magnitudes.
Keywords
Cite
@article{arxiv.1604.05918,
title = {Robust Picosecond writing of a Layered Antiferromagnet by Staggered Spin-Orbit-Fields},
author = {P. E. Roy and R. M. Otxoa and J. Wunderlich},
journal= {arXiv preprint arXiv:1604.05918},
year = {2016}
}