Related papers: Tunable spin-flop transition in artificial ferrima…
Manipulation of antiferromagnetic (AFM) spins by electrical means is on great demand to develop the AFM spintronics with low power consumption. In spite of the electrical modulation of insulated AFMs through coupling between their intrinsic…
Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a…
Altermagnets represent a novel magnetic phase with transformative potential for ultrafast spintronics, yet efficient control of their magnetic states remains challenging. We demonstrate an ultra-low-power electric-field control of…
We formulate a theory of spin-transfer torques in antiferromagnets, which covers the small to large limits of the exchange coupling energy relative to the kinetic energy of the inter-sublattice electron dynamics. Our theory suggests a…
Modern magnetic memory technology requires unconventional transverse spin current to achieve deterministic switching of perpendicular magnetization. Spin current in antiferromagnets (AFMs) has been long thought to be trivial as nonmagnets.…
We report of a theoretical model for calculating the H-T phase diagrams of a rare-earth ferrimagnet, taking into account anisotropies originated by both magnetization sublattices' and by the surface. The possibility of an exchange spring…
Antiferromagnetic (AFM) and ferromagnetic (FM) skyrmions possess unique advantages for spintronic applications. AFM skyrmions eliminate the skyrmion Hall effect and exhibit fast dynamics, whereas FM skyrmions are easier to nucleate and…
Interlayer exchange in synthetic antiferromagnets incorporating thin paramagnetic spacers can be controlled thermally. The spacer provides an additional ferromagnetic contribution that renormalizes the otherwise temperature-independent…
Current flowing is studied in magnetic junctions consisting of a ferromagnetic metal (FM), antiferromagnetic conductor (AFM) and a nonmagnetic metal closing the electric circuit. The FM layer with high anisotropy and pinned spins of the…
Magnetic anisotropy phenomena in bimetallic antiferromagnets Mn$_2$Au and MnIr are studied by first-principles density functional theory calculations. We find strong and lattice-parameter dependent magnetic anisotropies of the ground state…
Manipulation of directional magnon propagation, known as magnon spin current, is essential for developing magnonic memory and logic devices featuring nonvolatile functionalities and ultralow power consumption. Magnon spin current can…
Future applications of antiferromagnets (AFs) in many spintronics devices rely on the precise manipulation of domain walls. The conventional approach using static magnetic fields is inefficient due to the low susceptibility of AFs. Recently…
Implementation of antiferromagnetic compounds as active elements in spintronics has been hindered by their insensitive nature against external perturbations which causes difficulties in switching among different antiferromagnetic spin…
Spintronic and nanomagnetic devices often derive their functionality from layers of different materials and the interfaces between them. This is especially true for synthetic antiferromagnets - two or more ferromagnetic layers that are…
In the last few years, some ideas of electric manipulations in ferromagnetic heterostructures have been proposed for developing next generation spintronic devices. Among them, the magnetization switching driven by spin-orbit torque (SOT) is…
Electrical switching and readout of antiferromagnets allows to exploit the unique properties of antiferromagnetic materials in nanoscopic electronic devices. Here we report experiments on the spin-orbit torque induced electrical switching…
Spin-orbit torque (SOT) represents an energy efficient method to control magnetization in magnetic memory devices. However, deterministically switching perpendicular memory bits usually requires the application of an additional bias field…
Spintronic artificial neurons are intriguing building blocks for energy efficient Neuromorphic Computing (NC). Nevertheless, most contemporary implementations rely on symmetry breaking external in plane magnetic fields (H_X) for neuron…
Using an electric field instead of an electric current (or a magnetic field) to tailor the electronic properties of magnetic materials is promising for realizing ultralow energy-consuming memory devices because of the suppression of Joule…
Current studies of non-reciprocal superconducting (SC) transport have centered on the forward-backward asymmetry of the critical current measured along a single axis. In most realizations, this diode effect is achieved via introducing…