Related papers: Normalization and electronic circuit correction fo…
We propose to use the phenomenon of resonant tunneling for the detection of noise. The main idea of this method relies on the effect of homogeneous broadening of the resonant tunneling peak induced by the emission and absorption of…
A new mechanism different from the spin accumulation picture is proposed for the current induced magnetization switching in magnetic tunnel junctions by taking into account the effect of the electron electron interaction. We found in tunnel…
We demonstrate tunnel magnetoresistance (TMR) junctions based on a tri layer system consisting of an epitaxial NiMnSb, aluminum oxide and CoFe tri layer. The junctions show a tunnelling magnetoresistance of Delta R/R of 8.7% at room…
Magnetic tunnel junctions operating in the superparamagnetic regime are promising devices in the field of probabilistic computing, which is suitable for applications like high-dimensional optimization or sampling problems. Further, random…
In ferroelectric materials, spontaneous symmetry breaking leads to a switchable electric polarization, which offers significant promise for nonvolatile memories. In particular, ferroelectric tunnel junctions (FTJs) have emerged as a new…
We investigate the stochastic dynamics of nanoscale perpendicular magnetic tunnel junctions (pMTJs) and the correlations that arise when they are electrically coupled. Individual junctions exhibit thermally activated spin-transfer torque…
We investigate the noise current in a thermally biased tunnel junction between two superconductors with different zero-temperature gaps. When the Josephson effect is suppressed, this structure can support a nonlinear thermoelectric effect…
A prototype of magnetoresistive random access memory (MRAM) based on magnetic tunnel junctions (MTJ) was fabricated with crossed-anisotropy of magnetic layers on either side of the tunnelling barrier layer. It is demonstrated that the…
We present an electron holography experiment enabling the local and quantitative study of magnetic properties in magnetic tunnel junction. The junction was fully characterized during the switching process and each possible magnetic…
Using the closed-time path integral approach, we nonperturbatively study inelastic tunneling of electrons via magnetic impurities in the barrier accompanied by phonon emission in a magnetic tunnel junction. The spectrum density of phonon…
We study quantum-mechanically the frequency-dependent current noise of a tunnel-junction coupled to a nanomechanical oscillator. The cases of both DC and AC voltage bias are considered, as are the effects of intrinsic oscillator damping.…
Recently, multiferroic tunnel junctions (MFTJs) have gained significant spotlight in the literature due to its high tunneling electro-resistance together with its non-volatility. In order to analyze such devices and to have insightful…
The radio-frequency (RF) voltage amplification property of a tunnel magnetoresistance device driven by an RF external-magnetic-field-induced ferromagnetic resonance was studied. The proposed device consists of a magnetic tunnel junction…
We have developed and optimized two categories of spin transfer torque magnetic tunnel junctions (STT-MTJs) that exhibit a high tunnel magnetoresistance (TMR) ratio, low critical current, high outputpower in the micro watt range, and…
Ferroelectric polarization switching in electrically controlled van der Waals multiferroic tunnel junctions (vdW-MFTJs) causes atomic migration, compromising device stability and fatigue resistance. Here we propose a fully magnetically…
In tunnel junctions with ferroelectric barriers, switching the polarization direction modifies the electrostatic potential profile and the associated average tunnel barrier height. This results in strong changes of the tunnel transmission…
The performance of superconducting devices like qubits, SQUIDs, and particle detectors is often limited by finite coherence times and 1/f noise. Various types of slow fluctuators in the Josephson junctions and the passive parts of these…
We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle, in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and…
One of the biggest challenges the current STT-RAM industry faces is maintaining a high thermal stability while trying to switch within a given voltage pulse and energy cost. In this paper, we present a physics based analytical model that…
We propose energy band engineering to enhance tunneling electroresistance (TER) in ferroelectric tunnel junctions (FTJs). We predict that an ultrathin dielectric layer with a smaller band gap, embedded into a ferroelectric barrier layer,…