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We report on the noise performance characteristics of magnetic sensors using both magnetic tunnel junction (MTJ) and giant magnetoresistance (GMR) elements. Each sensor studied has a notably different noise and detectivity. Of the sensors…

We fabricated fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions (MTJs) with low junction resistance-area products (several $\Omega$ $\mu$m$^2$) and conducted a theoretical estimation of square-low rectifying performance for a…

Magnetic Tunnel Junctions (MTJs) constitute the novel memory element in STT-MRAM, which is ramping to production at major foundries as an eFlash replacement. MTJ switching exhibits a stochastic behavior due to thermal fluctuations, which is…

We study current fluctuations in tunnel junctions driven by a voltage source. The voltage is applied to the tunneling element via an impedance providing an electromagnetic environment of the junction. We use circuit theory to relate the…

Naturally random devices that exploit ambient thermal noise have recently attracted attention as hardware primitives for accelerating probabilistic computing applications. One such approach is to use a low barrier nanomagnet as the free…

We measured the shot noise in fully epitaxial Fe/MgAl2OX/Fe-based magnetic tunneling junctions (MTJs). While the Fano factor to characterize the shot noise is very close to unity in the antiparallel configuration, it is reduced to 0.98 in…

We study noise spectra of currents through a tunnel junction in weak tunneling limit. We introduce effective capacitance to take into account the interaction effect and explicitly incorporate the electromagnetic environment of the junction…

We have studied tunnel magnetoresistance (TMR) in junctions with 3d ferromagnetic electrodes. Previously we predicted that defects in the barrier would result in reduced effective polarization P of the impurity assisted current. This is…

We report on tunnelling magnetoresistance (TMR), current-voltage (IV) characteristics and low frequency noise in epitaxially grown Fe(110)/MgO(111)/Fe(110) magnetic tunnel junctions (MTJs) with dimensions from 2x2 to 20x20 um2. The…

We experimentally investigate the structural, magnetic and electrical transport properties of La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ based magnetic tunnel junctions with a SrSnO$_3$ barrier. Our results show that despite the large number of…

We report that low frequency (up to 200 kHz) noise spectra of magnetic tunnel junctions with areas ~10^{-10}cm^2$ at 10 Kelvin deviate significantly from the typical 1/f behavior found in large area junctions at room temperature. In most…

This paper deals with the design of MEMS using piezoresistivity as transduction principle. It is demonstrated that when the sensor topology doesn't allow a perfect matching of strain gauges, the resolution is limited by the ability of the…

We study whether a direct measurement of the absolute temperature of a Magnetic Tunnel Junction (MTJ) can be performed using the high frequency electrical noise that it delivers under a finite voltage bias. Our method includes quasi-static…

In this work we investigate the effect of the mechanical stress on the performance of magnetic tunnel junctions (MTJ) with perpendicular magnetic anisotropy. We developed a 4-point bending setup, that allows us to apply a constant stress…

Voltage fluctuations generated in a hot resistor can cause extraction of heat from a colder normal metal electrode of a hybrid tunnel junction between a normal metal and a superconductor. We extend the analysis presented in [Phys. Rev.…

We demonstrate that thermally stable perpendicular magnetic tunnel junctions (pMTJs), widely used in spin-transfer torque magnetic random-access memory, can be actuated with nanosecond pulses to exhibit tunable stochastic behavior. This…

In this paper we analyze different contributions to the magnetoresistance of magnetic tunneling junctions at low voltages. A substantial fraction of the resistance drop with voltage can be ascribed to variations of the density of states and…

We report on room temperature magnetoresistance and low frequency noise in sub-100nm elliptic CoFeB/MgO/CoFeB magnetic tunnel junctions with ultrathin (0.9nm) barriers. For magnetic fields applied along the hard axis, we observe current…

GaMnAs-based magnetic tunnel junction (MTJ) devices are characterized by in-plane and perpendicular-toplane magnetotransport at low temperatures. Perpendicular-to-plane transport reveals the typical tunneling magnetotransport (TMR) signal.…

We report the experimental observation of sub-Poissonian shot noise in single magnetic tunnel junctions, indicating the importance of tunneling via impurity levels inside the tunnel barrier. For junctions with weak zero-bias anomaly in…