Related papers: Normalization and electronic circuit correction fo…
Magnetic tunnel junctions (MTJs), that consist of two ferromagnetic electrodes separated by an insulating barrier layer, have non-trivial fundamental properties associated with spin-dependent tunneling. Especially interesting are fully…
We investigate the dependence of perpendicular and parallel spin transfer torque (STT) and tunneling magnetoresistance (TMR) on the insulator barrier energy in the magnetic tunnel junction (MTJ). We employed single orbit tight binding model…
We report on the magnetic switching and backhopping effects due to spin-transfer-torque in magnetic tunnel junctions. Experimental data on the current-induced switching in junctions with MgO tunnel barrier reveal a random back-and-forth…
We study the behaviour of the magnetization in a half-metallic ferromagnet/nonmagnetic insulator/ferromagnetic metal/paramagnetic metal (FM1/NI/FM2/PM) tunnel junction. It is calculated self-consistently within the nonequilibrium Keldysh…
A semiclassical theory of the low frequency shot noise in ferromagnet - normal metal systems is formulated. Non-collinear magnetization directions of the ferromagnetic leads, arbitrary junctions and the elastic and inelastic scattering…
Here we demonstrate that both, tunnel magneto resistance (TMR) and resistive switching (RS), can be observed simultaneously in nano-scale magnetic tunnel junctions. The devices show bipolar RS of 6 % and TMR ratios of about 100 %. For each…
We consider a quantum wire double junction system with each wire segment described by a spinless Luttinger model, and study theoretically shot noise in this system in the sequential tunneling regime. We find that the non-equilibrium…
This work reports an approach to study complementary pairs of bipolar junction transistors, often used in push-pull circuits typically found at the output stages of operational amplifiers. After the data is acquired and pre-processed, an…
Next-generation spintronic sensors aim to overcome the limitations of traditional tunneling-magnetoresistance (TMR) devices, such as complex manufacturing, high $1/f$ noise, and significant offsets. This work presents a comprehensive…
We investigate the possibility to employ magnetic Josephson junctions as magnetic-noise detectors. To illustrate our idea, we consider a system consisting of a quantum dot coupled to superconducting leads in the presence of an external…
We measure current fluctuations of mesoscopic devices in the quantum regime, when the frequency is of the order of or higher than the applied voltage or temperature. Detection is designed to probe separately the absorption and emission…
This paper addresses the question: Can spintronic circuits based on Magnetic Tunnel Junction (MTJ) transducers outperform their state-of-the-art CMOS counterparts? To this end, we use the EPFL combinational benchmark sets, synthesize them…
Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriers are prepared to examine their stability under large current stress. The devices show magnetoresistance ratios of up to 110 % and an area resistance product of down…
A time-dependent bias voltage on a tunnel junction generates a time-dependent modulation of its current fluctuations, and in particular of its variance. This translates into an excitation at frequency $\tilde{f}$ generating correlations…
This paper presents new structure and adaptation criterion for equalization of two-dimensional magnetic recording channels, as opposed to typical linear equalizer with minimum mean square error (MMSE) as adaptation criterion. To compensate…
We investigate the phenomenon of reflectionless tunneling in ballistic normal-metal--superconductor (NS) structures, using a semiclassical formalism. It is shown that applied magnetic field and superconducting phase difference both impair…
We introduce a design modification to conventional geometry of the cryogenic three-terminal switch, the nanocryotron (nTron). The conventional geometry of nTrons is modified by including parallel current-carrying channels, an approach aimed…
We study inelastic effects on the electronic current noise in molecular junctions, due to the coupling between transport electrons and vibrational degrees of freedom. Using a full counting statistics approach based on the generalized…
Stable and switchable polarization of ferroelectric materials opens a possibility to electrically control their functional behavior. A particularly promising approach is to employ ferroelectric tunnel junctions where the polarization…
Strain-controlled modulation of the magnetic switching behavior in magnetic tunnel junctions (MTJs) could provide the energy efficiency needed to accelerate the use of MTJs in memory, logic, and neuromorphic computing, as well as an…