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Very large-scale integration of devices in a circular pattern has several advantages over the commonly used rectangular grid layout. For the development of such integrated circuits on a 2D semiconductor platform, spontaneous growth of the…
Semiconductor nanowires are promising material systems for coming of age nanotechnology. The usage of the vapor solid solid (VSS) route, where the catalyst used for promoting axial growth of nanowire is a solid, offers certain advantages…
2H-TaS$_2$ few layers have been grown epitaxially onto GaN(0001). A high substrate growth temperature of 825$^{\circ}$C induces best structural properties of the overlayer, as revealed by in-situ electron diffraction (RHEED and LEED). The…
The diffusion of photo-generated holes is studied in a high-mobility mesoscopic GaAs\ channel where electrons exhibit hydrodynamic properties. It is shown that the injection of holes into such an electron system leads to the formation of a…
N-type doping of GaAs nanowires has proven to be difficult because the amphoteric character of silicon impurities is enhanced by the nanowire growth mechanism and growth conditions. The controllable growth of n-type GaAs nanowires with…
Metasurface antenna arrays, formed by tiling multiple metasurface subapertures, offer an alternative architecture to electrically large beamsteering arrays often used in radar and communications. The advantages offered by metasurfaces are…
Direct laser writing method is a promising technique for the large-scale and cost-effective fabrication of periodic nanostructure arrays exciting hybrid lattice plasmons. This type of electromagnetic mode manifests a narrow and deep…
We investigate the axial and radial growth of GaN nanowires upon a variation of the Ga flux during molecular beam epitaxial growth. An increase in the Ga flux promotes radial growth without affecting the axial growth rate. In contrast, a…
We report on the direct correlation between the structural and optical properties of single, as-grown core-multi-shell GaAs/In$_{0.15}$Ga$_{0.85}$As/GaAs/AlAs/GaAs nanowires. Fabricated by molecular beam epitaxy on a pre-patterned Si(111)…
Using high quality undoped GaAs/AlGaAs heterostructures with optically patterned insulation between two layers of gates, it is possible to investigate very low density mesoscopic regions where the number of impurities is well quantified.…
We report on the experimental observation of the beaming effect in photonic crystals enhanced via surface modes. We experimentally map the spatial field distribution of energy emitted from a subwavelength photonic crystal waveguide into…
Achieving device-to-device reproducibility is a critical bottleneck for scalable photonic integrated circuits, as subtle variations in bottom-up epitaxial growth and fabrication severely limit yield. We present a machine learning workflow…
Vortex waves, which carry orbital angular momentum, have found use in a range of fields from quantum communications to particle manipulation. Due to their widespread influence, significant attention has been paid to the methods by which…
Uniform, defect-free crystal interfaces and surfaces are crucial ingredients for realizing high-performance nanoscale devices. A pertinent example is that advances in gate-tunable and topological superconductivity using…
We present a simple fabrication method for the realization of suspended GaAs nanomembranes for cavity quantum optomechanics experiments. GaAs nanomembranes with an area of 1.36 mm by 1.91 mm and a thickness of 160 nm are obtained by using a…
We demonstrate second harmonic generation at telecommunications wavelengths in L3 photonic crystal cavities in (111)-oriented GaAs. The second harmonic power from photonic crystal cavities fabricated in (111)-oriented GaAs is significantly…
III-V solar cells dominate the high efficiency charts, but with significantly higher cost than other solar cells. Ultrathin III-V solar cells can exhibit lower production costs and immunity to short carrier diffusion lengths caused by…
In this work, we present conception and study of gallium nitride (GaN) nanostructures on a gallium arsenide (GaAs) substrate with (111)A orientation. The nanostructures were designed by GaN droplet epitaxy and studied in-situ by X-ray…
We study structural and chemical transformations induced by focused laser beam in GaAs nanowires with axial zinc-blende/wurtzite (ZB/WZ) heterostucture. The experiments are performed using a combination of transmission electron microscopy,…
We report on controllable production of nanostructures embedded in a porous glass substrate by femtosecond laser direct writing. We show that a hollow nano-void with a lateral size of ~40 nm and an axial size of ~1500 nm can be achieved by…