Related papers: Large Transport Gap Modulation in Graphene via Ele…

Bilayer graphene (BLG) possesses a finite bandgap when a potential difference is introduced between the two graphene layers. The potential difference is known to be introduced by surface charge transfer. Thus, it is expected that a finite…

Bilayer graphene is a promising material for radio-frequency transistors because its energy gap might result in a better current saturation than the monolayer graphene. Because the great deal of interest in this technology, especially for…

Graphene has emerged as a novel platform for opto-electronic applications and photodetector, but the inefficient conversion from light to current has so far been an important roadblock. The main challenge has been to increase the light…

We demonstrated theoretically that the renormalization of the electron energy spectrum near the Dirac point of graphene by a strong high-frequency electromagnetic field (dressing field) drastically depends on polarization of the field.…

The influence of magnetic impurities on the transport properties of graphene is investigated in the regime of strong applied electric fields. As a result of electron-hole pair creation, the response becomes nonlinear and dependent on the…

In rhombohedral-stacked few-layer graphene, the very flat energy bands near the charge neutrality point are unstable to electronic interactions, giving rise to states with spontaneous broken symmetries. Using transport measurements on…

Due to its high charge carrier mobility, broadband light absorption, and ultrafast carrier dynamics, graphene is a promising material for the development of high-performance photodetectors. Graphene-based photodetectors have been…

We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call Graphene Base Transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the…

The modulation depth of 2-D electron gas (2DEG) based THz modulators using AlGaAs/GaAs heterostructures with metal gates is inherently limited to < 30%. The metal gate not only attenuates the THz signal (> 90%) but also severely degrades…

For graphene to be utilized in the digital electronics industry the challenge is to create bandgaps of order 1eV as simply as possible. The most successful methods for the creation of gaps in graphene are (a) confining the electrons in…

Graphene is a material with great potential in the field of spintronics, combining good conductivity with low spin--orbit coupling (SOC), which allows for the transport of spin currents over long distances. However, this lack of SOC also…

Superconductivity can be induced in a normal material via the leakage of superconducting pairs of charge carriers from an adjacent superconductor. This so-called proximity effect is markedly influenced by graphene unique electronic…

Graphene/silicon heterostructures have attracted tremendous interest as a new platform for diverse electronic and photonic devices such as barristors, solar cells, optical modulators, and chemical sensors. The studies to date largely focus…

Graphene electrodes provide a suitable alternative to metal contacts in molecular conduction nanojunctions. Here, we propose to use graphene electrodes as a platform for effective photon assisted tunneling through molecular conduction…

The realization of optoelectronic devices on paper has been an outstanding challenge due to the large surface roughness and incompatible nature of paper with optical materials. Here, we demonstrate a new class of optoelectronic devices on a…

We report on the transport properties of hybrid devices obtained by depositing graphene on a LaAlO3/SrTiO3 oxide junction hosting a 4 nm-deep two-dimensional electron system. At low graphene-oxide inter-layer bias the two electron systems…

Graphene provides a unique platform for hosting high quality 2D electron systems. Encapsulating graphene with hexagonal boron nitride (hBN) to shield it from noisy environments offers the potential to achieve ultrahigh performance…

Using the renormalized-ring-diagram approximation, we study the compressibility of the interacting electrons in bilayer graphene. The compressibility is equivalent to the spin susceptibility apart from a constant factor. The chemical…

A recipe on how to engineer a band gap in the energy spectrum for the carriers in graphene is conveyed. It is supported by a series of numerical simulations inspired by an analytical result based on the opening of a band gap in periodically…

Thermoelectric power of a material, typically governed by its band structure and carrier density, can be varied by chemical doping that is often restricted by solubility of the dopant. Materials showing large thermoelectric power are useful…