We report on the transport properties of hybrid devices obtained by depositing graphene on a LaAlO3/SrTiO3 oxide junction hosting a 4 nm-deep two-dimensional electron system. At low graphene-oxide inter-layer bias the two electron systems are electrically isolated, despite their small spatial separation, and very efficient reciprocal gating is shown. A pronounced rectifying behavior is observed for larger bias values and ascribed to the interplay between electrostatic depletion and tunneling across the LaAlO3 barrier. The relevance of these results in the context of strongly-coupled bilayer systems is discussed.
@article{arxiv.1602.07506,
title = {Transport in strongly-coupled graphene-LaAlO3/SrTiO3 hybrid systems},
author = {I. Aliaj and I. Torre and V. Miseikis and E. di Gennaro and A. Sambri and A. Gamucci and C. Coletti and F. Beltram and F. M. Granozio and M. Polini and V. Pellegrini and S. Roddaro},
journal= {arXiv preprint arXiv:1602.07506},
year = {2016}
}