Related papers: Generalized Constant Current Method for Determinin…
This brief reports the analytical modeling and measurements of the inflection in the MOSFET transfer characteristics at cryogenic temperatures. Inflection is the inward bending of the drain current versus gate voltage, which reduces the…
Due to significant manufacturing process variations, the performance of integrated circuits (ICs) has become increasingly uncertain. Such uncertainties must be carefully quantified with efficient stochastic circuit simulators. This paper…
This paper investigates the accuracy of various Generalized Cross-Correlation with Phase Transform (GCC-PHAT) methods for a close pair of microphones. We investigate interpolation-based methods and also propose another approach based on…
We introduce a new method for hardware non-uniform random number generation based on the transfer characteristics of graphene field-effect transistors (GFETs) which requires as few as two transistors and a resistor (or transimpedance…
Integrating grid-forming converters (GFMCs) into grid-following converter (GFLC)-dominated power systems enhances the grid strength, but GFMCs' current-limiting characteristic triggers dynamic switching between constant voltage control…
A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and…
Uncertainties have become a major concern in integrated circuit design. In order to avoid the huge number of repeated simulations in conventional Monte Carlo flows, this paper presents an intrusive spectral simulator for statistical circuit…
Self-heating in surrounding gate transistors can degrade its on-current performance and reduce lifetime. If a transistor heats/cools with time-constants less than the inverse of the operating frequency, a predictable, frequency-independent…
We obtained a semi-analytical treatment obtaining estimators for the sample variance and variance of sample variance for the RTS noise. Our method suggests a way to experimentally determine the constants of capture and emission in the case…
Unified virtual oscillator controller (uVOC) inherits the rigorous analytical foundation offered by oscillator based grid-forming (GFM) controllers and enables fast over-current limiting and fault ride-through (FRT). Control design for…
Recent Scanning Tunneling Spectra(STS) measurement on underdoped cuprate discovers the increase of the maximum superconducting transition temperature $T_c$ when the size of charge transfer gap (CTG) is reduced. Applying pressure is another…
In this work, the threshold voltage instability of normally-off p-GaN high electron mobility transistors (HEMTs) has been investigated by monitoring the gate current density during device on-state. The origin of the gate current variations…
Learning from two-level voltage source converters, the existing impedance-based stability analyses of modular multilevel converters (MMCs) primarily focus on system modes with finite closed-loop transfer functions, which consider…
The intrinsic mobility degradation coefficient, contact resistance and the transconductance parameter of graphene field-effect transistors (GFETs) are extracted for different technologies by considering a novel transport model embracing…
This work develops a constraint-aware grid-forming (GFM) control that explicitly accounts for current limits and modulation limits within the GFM oscillator dynamics generating the GFM voltage reference (i.e., phase angle and magnitude).…
The mobility-degradation-based model for the drain-to-source or output resistance of a graphene field-effect-transistor is linearized here using a Taylor series approximation. This simplification is shown to be valid from magnitudes of the…
As technology scales down, the static power is expected to become a significant fraction of the total power. The exponential dependence of static power with the operating temperature makes the thermal profile estimation of high-performance…
Inter-terminal capacitances (ITCs) have major influence on the dynamic performance of power SiC MOSFETs. Knowledge of the exact values for the ITCs is required in order to perform accurate and predictive compact model simulations of their…
Highly disordered superconductors, in the magnetic-field-driven insulating state, can show discontinuous current-voltage characteristics. Electron overheating has been shown to give a consistent description of this behavior, but there are…
State-of-the-art in-memory computation has recently emerged as the most promising solution to overcome design challenges related to data movement inside current computing systems. One of the approaches to performing in-memory computation is…