Related papers: Generalized Constant Current Method for Determinin…
In this paper, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is proposed based on a charge-based model. In particular, we have investigated the effect of…
This brief examines the behavior of DC circuits comprised of resistively interconnected constant power devices, as may arise in DC microgrids containing micro-sources and constant power loads. We derive a sufficient condition for all…
The electrostatic modeling of conductors is a fundamental challenge in various applications, including the prediction of parasitic effects in electrical interconnects, the design of biasing networks, and the modeling of biological,…
A method for determining the current signature faults using Fractional Fourier Transform (FrFT) has been developed. The method has been applied to the real-time steady-state current of the inverter-fed high power induction motor for fault…
A robust power gating design using Graphene Nano-Ribbon Field Effect Transistors (GNRFET) is proposed using 16nm technology. The Power Gating (PG) structure is composed of GNRFET as a power switch and MOS power gated module. The proposed…
We propose a two-terminal method to measure shot noise in mesoscopic systems based on an instability in the current-voltage characteristic of an on-chip detector. The microscopic noise drives the instability, which leads to random switching…
The latest generation of transistors are nanoscale devices whose performance and reliability are limited by thermal noise in low-power applications. Therefore developing efficient methods to compute the voltage and current fluctuations in…
Qubits based on the magnetic flux degree of freedom require a flux bias, whose stability and precision strongly affect the qubit performance, up to a point of forbidding the qubit operation. Moreover, in the perspective of multiqubit…
The extremely low threshold voltage (Vth) of native MOSFETs (Vth~0V@300K) is conducive to the design of cryogenic circuits. Previous research on cryogenic MOSFETs mainly focused on the standard threshold voltage (SVT) and low threshold…
In this paper, a novel model-free wide-area damping control (WADC) method is proposed, which can achieve full decoupling of modes and damp multiple critical inter-area oscillations simultaneously using grid-connected voltage source…
In this work, we propose an explicit analytical equation to show the variation of top gate threshold voltage with respect to the JFET bottom gate voltage for a Flexible Threshold Voltage Field Effect Transistor (Flexible-FET) by solving 2-D…
We propose a new experimental technique for cyclic voltammetry, based on the first-order reversal curve (FORC) method for analysis of systems undergoing hysteresis. The advantages of this electrochemical FORC (EC-FORC) technique are…
Field-effect transistors (FETs) based on 2D materials have already reached the stage of trial FAB integration. However, reliability limitations caused by various defects present a serious obstacle for their smooth way forward, especially…
We present a method for extracting high-spatial resolution dielectric constant data at microwave frequencies. A scanning near field microwave microscope probes a sample and acquires data in the form of the frequency and quality factor…
This paper presents a self-consistent numerical model for calculating the charge profile and gate capacitance and therefore obtaining C-V characterization for a gate-all-around graded nanowire MOSFET with a high mobility axially graded…
A modeling of metasurfaces in the finite element method (FEM) based on generalized sheet transition conditions (GSTCs) is presented. The discontinuities in electromagnetic fields across a metasurface as represented by the GSTC are modeled…
The current-voltage characteristics of superconductors are commonly determined by means of a standard 4-probe DC measurement technique. In coated conductors, however, one often encounters problems due to weak or no stabilization and in such…
A non-relaxing method based on cyclic gate bias stress is used to probe the interface or near-interface traps in the SiO$_2$/4H-SiC system over the whole 4H-SiC band gap. The temperature dependent instability of the threshold voltage in…
Power transistors such as IGBTs and MOSFETs are a source of electromagnetic interference (EMI) during switching due to rapid voltage/current variations. Increasing the switching time can reduce the generation of EMI but increases losses.…
This paper proposes a new topology of a non-isolated two-phase interleaved boost DC-DC converters with modified Greinacher voltage multiplier cells (VMCs) in continuous conduction mode (CCM). The proposed topology can quickly achieve a high…