Related papers: Generalized Constant Current Method for Determinin…
A MOSFET threshold voltage extraction method covering the entire range of drain-to-source voltage, from linear to saturation modes, is presented. Transconductance-to-current ratio is obtained from MOSFET transfer characteristics measured at…
Generalized short circuit ratio (gSCR) for gird strength assessment of multi-infeed high voltage direct current (MIDC) systems is a rigorous theoretical extension of traditional short circuit ratio (SCR), which allows the considerable…
In conventional metal-oxide semiconductor (CMOS) electronics, the logic state of a device is set by a gate voltage (VG). The superconducting equivalent of such effect had remained unknown until it was recently shown that a VG can tune the…
Extended Floating Gate Field Effect Transistors (EGFETs) are CMOS-compatible floating gate devices capable of detecting charges on their sensing area by the relative shifts in current-voltage (I-V) characteristics. The I-V shifts are…
Thermal transient measurement based on source-drain voltage is a standard method to characterize thermal properties of silicon semiconductors but is doubtful to be directly applied to silicon carbide (SiC) devices. To evaluate its…
We propose an explicit small-signal graphene field-effect transistor (GFET) parameter extraction procedure based on a charge-based quasi-static model. The dependence of the small-signal parameters on both gate voltage and frequency is…
The relationship between the short circuit ratio (SCR) and static voltage stability is analyzed in this paper. According to eigenvalue decomposition method, a novel concept named generalized short circuit ratio (gSCR) has been proposed for…
Central charge is a fundamental quantity in conformal field theories (CFT), and plays a crucial role in determining universality classes of critical points in two-dimensional systems. Despite its significance, the measurement of central…
The output impedance matrix of a grid-connected converter plays an important role in analyzing system stability. Due to the dynamics of the DC-link control and the phase locked loop (PLL), the output impedance matrices of the converter and…
In this article, we proposed a Variable threshold MOSFET(VTMOS)approach which is realized from Dynamic Threshold MOSFET(DTMOS), suitable for sub-threshold digital circuit operation. Basically the principle of sub- threshold logics is…
The control of a superconducting current via the application of a gate voltage has been recently demonstrated in a variety of superconducting devices. Although the mechanism underlying this gate-controlled supercurrent (GCS) effect remains…
This paper presents a physics-based model for the threshold voltage in bulk MOSFETs valid from room down to cryogenic temperature (4.2 K). The proposed model is derived from Poisson's equation including bandgap widening, intrinsic…
Grid-forming voltage source converter (GF-VSC) has been identified as the key technology for the operation of future converter-dominated power systems. Among many other issues, transient stability of this type of power systems remains an…
A specific failure mode designated as transient micro-short circuit (TMSC) has been identified in practical battery systems, exhibiting subtle and latent characteristics with measurable voltage deviations. To further improve the safe use of…
Process-related and stress-induced changes in threshold voltage are major variability concerns in ultra-scaled CMOS transistors. The device designers consider this variability as an irreducible part of the design problem and use different…
The main target of this article is to propose for the first time a physics-based continuous and symmetric compact model that accurately captures IV experimental dependencies induced by geometrical scaling effects for graphene transistor…
The effect of decreasing Drain-Induced Barrier Lowering (DIBL) is one of the non-desirable short-channel effects in the MOSFETs family, which causes the threshold voltage of the transistor to be reduced by increasing the voltage of the…
The mobility of emerging (e.g., two-dimensional, oxide, organic) semiconductors is commonly estimated from transistor current-voltage measurements. However, such devices often experience contact gating, i.e., electric fields from the gate…
This article proposes a method for generator controller tuning in a power system affected by stochastic loads. The method uses the Analysis of Variance to detect the controllers with significant effect over the quality of the system…
The generator coordinate method (GCM) casts the wavefunction as an integral over a weighted set of non-orthogonal single determinantal states. In principle this representation can be used like the configuration interaction (CI) or shell…