Related papers: Threshold Logic with Current-Driven Magnetic Domai…
Neuromorphic computing (NC) architecture has shown its suitability for energy-efficient computation. Amongst several systems, spin-orbit torque (SOT) based domain wall (DW) devices are one of the most energy-efficient contenders for NC. To…
We demonstrate how a genetic ring oscillator network with quorum sensing feedback can operate as a robust logic gate. Specifically we show how a range of logic functions, namely AND/NAND, OR/NOR and XOR/XNOR, can be realized by the system,…
We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and…
Conductive ferroelectric domain walls--ultra-narrow and configurable conduction paths, have been considered as essential building blocks for future programmable domain wall electronics. For applications in high density devices, it is…
Domain walls are the transition regions between two magnetic domains. These objects have been very relevant during the last decade, not only due to their intrinsic interest in the development of novel spintronics devices but also because of…
The growing demand for storage, due to big data applications, cannot be met by hard disk drives. Domain wall (DW) memory devices such as racetrack memory offer an alternative route to achieve high capacity storage. In DW memory, control of…
Spintronic devices, such as the domain walls and skyrmions, have shown significant potential for applications in energy-efficient data storage and beyond CMOS computing architectures. In recent years, spiking neural networks have shown more…
The authors show how to implement a 4-state universal logic gate (NOR) using three strain-coupled magnetostrictive-piezoelectric multiferroic nanomagnets (e.g. Ni/PZT) with biaxial magnetocrystalline anisotropy. Two of the nanomagnets…
We report the experimental demonstration of a controlled-NOT (CNOT) quantum logic gate between motional and internal state qubits of a single ion where, as opposed to previously demonstrated gates, the conditional dynamics depends on the…
In this study, we construct the quantum reversible counterparts of the logical AND, OR, XOR, NOR, and NAND gates. We utilize a quantum Fourier transform (QFT)-based adder circuit that replicates the functionality of a digital half-adder,…
Mechanically bent nickel nanowires show clear features in their room temperature magnetoresistance when a domain wall is pinned at the location of the bend. By varying the direction of an applied magnetic field, the wire can be prepared…
A novel scheme for non-volatile digital computation is proposed using spin-transfer torque (STT) and automotion of magnetic domain walls (DWs). The basic computing element is composed of a lateral spin valve (SV) with two ferromagnetic (FM)…
In this work we study the evolution of intrinsic domain wall magnetoresistance (DWMR) with domain wall confinement. Clean permalloy notched half-ring nanocontacts are fabricated using a special ultra-high vacuum electromigration procedure…
Antiferromagnets are promising materials for future spintronic applications due to their unique properties including zero stray fields, robustness versus external magnetic fields and ultrafast dynamics, which have attracted extensive…
We demonstrate a novel computational architecture based on fluid convection logic gates and heat flux-mediated information flows. Our previous work demonstrated that Boolean logic operations can be performed by thermally-driven convection…
Current-induced magnetic domain wall motion at zero magnetic field is observed in the permalloy layer of a spin-valve-based nanostripe using photoemission electron microscopy. The domain wall movement is hampered by pinning sites, but in…
Existing data for soft magnetic materials of critical current for domain-wall motion, wall speed driven by a magnetic field, and wall electrical resistance, show that all three observable properties are related through a single parameter:…
Use of a spin polarized current for the manipulation of magnetic domain walls in ferromagnetic nanowires has been the subject of intensive research for many years. Recently, due to technological advancements, creating nano-contacts with…
Domain walls (DWs) in magnetic nanowires are promising candidates for a variety of applications including Boolean/unconventional logic, memories, in-memory computing as well as magnetic sensors and biomagnetic implementations. They show…
We introduce a novel logic style with self-checking capability to enhance hardware reliability at logic level. The proposed logic cells have two-rail inputs/outputs, and the functionality for each rail of outputs enables construction of…