Related papers: Threshold Logic with Current-Driven Magnetic Domai…
Junctionless oxide-based neuron thin-film transistors with in-plane-gate structure are fabricated at room temperature with a laser scribing process. The neuron transistors are composed of a bottom ITO floating gate and multiples of two…
Domain walls in nano-constrictions are investigated with a focus on thermal properties. In general, the magnetization component perpendicular to the easy axis which in a domain wall usually occurs has a value different from the easy-axis…
Quantum computers comprise elementary logic gates that initialize, control and measure delicate quantum states. One of the most important gates is the controlled-NOT, which is widely used to prepare two-qubit entangled states. The…
Magnetic nanowires supporting field- and current-driven domain wall motion are envisioned for new methods of information storage and processing. A major obstacle for their practical use is the domainwall velocity, which is traditionally…
Electronic logic gates are the basic building blocks of every computing and micro controlling system. Logic gates are made of switches, such as diodes and transistors. Ion-selective, ionic switches may emulate electronic switches [1-8]. If…
The effect of domain walls on electron transport has been investigated in microfabricated Fe wires (0.65 to 20 $\mu m$ linewidths) with controlled stripe domains. Magnetoresistance (MR) measurements as a function of domain wall density,…
Machine learning implements backpropagation via abundant training samples. We demonstrate a multi-stage learning system realized by a promising non-volatile memory device, the domain-wall magnetic tunnel junction (DW-MTJ). The system…
We exploit the ability to precisely control the magnetic domain structure of perpendicularly magnetized Pt/Co/Pt trilayers to fabricate artificial domain wall arrays and study their transport properties. The scaling behaviour of this model…
A crucial requirement for scalable quantum-information processing is the realization of multiple-qubit quantum gates. Universal multiple-qubit gates can be implemented by a set of universal single qubit gates and any one kind of two-qubit…
The switching dynamics of a multiferroic nanomagnetic NAND gate with fan-in/fan-out is simulated by solving the Landau-Lifshitz-Gilbert (LLG) equation while neglecting thermal fluctuation effects. The gate and logic wires are implemented…
Magnetic domain wall motion has recently garnered significant interest as a physical mechanism to enable energy-efficient, next-generation brain-inspired computing architectures. However, realizing all behaviors required for neuromorphic…
All-spin-based computing combining logic and nonvolatile magnetic memory is promising for emerging information technologies. However, the realization of a universal spin logic operation representing a reconfigurable building block with…
We propose a new type of multi-bit and energy-efficient magnetic memory based on current-driven, field-free, and highly controlled domain wall motion. A meandering domain wall channel with precisely interspersed pinning regions provides the…
Throughout the world, the numbers of researchers or hardware designer struggle for the reducing of power dissipation in low power VLSI systems. This paper presented an idea of using the power gating structure for reducing the sub threshold…
In the last decade, two revolutionary concepts in nano magnetism emerged from research for storage technologies and advanced information processing. The first suggests the use of magnetic domain walls (DWs) in ferromagnetic nanowires to…
A domain wall in a ferromagnetic one-dimensional nanowire experiences current induced motion due to its coupling with the conduction electrons. When the current is not sufficient to drive the domain wall through the wire, or it is confined…
Recent studies have predicted extraordinary properties for transverse domain walls in cylindrical nanowires: zero depinning current, the absence of the Walker breakdown, and applications as domain wall oscillators. In order to reliably…
The magnetization reversal of three-segment cylindrical nanoelements comprising of alternating nanowire and nanotube sections is investigated by means of Monte Carlo simulations. Such nanoelements may feature a three-state behaviour with an…
Domain wall dynamics in a magnetoelectric antiferromagnet is analyzed, and its implications for magnetoelectric memory applications are discussed. Cr$_2$O$_3$ is used in the estimates of the materials parameters. It is found that the domain…
Ferroelectric domain walls are quasi-2D systems that show great promise for the development of non-volatile memory, memristor technology and electronic components with ultra-small feature size. Electric fields, for example, can change the…