Room temperature domain wall pinning in bent ferromagnetic nanowires
Abstract
Mechanically bent nickel nanowires show clear features in their room temperature magnetoresistance when a domain wall is pinned at the location of the bend. By varying the direction of an applied magnetic field, the wire can be prepared either in a single-domain state or a two-domain state. The presence or absence of the domain wall acts to shift the switching fields of the nanowire. In addition, a comparison of the magnetoresistance of the nanowire with and without a domain wall shows a shift in the resistance correlated with the presence of a wall. The resistance is decreased by 20-30 milli-Ohms when a wall is present, compared to an overall resistance of 40-60 Ohms. A model of the magnetization was developed that allowed calculation of the magnetostatic energy of the nanowires, giving an estimate for the nucleation energy of a domain wall.
Cite
@article{arxiv.cond-mat/0308579,
title = {Room temperature domain wall pinning in bent ferromagnetic nanowires},
author = {D. M. Silevitch and M. Tanase and C. L. Chien and D. H. Reich},
journal= {arXiv preprint arXiv:cond-mat/0308579},
year = {2007}
}
Comments
11 pages, 15 figures