Related papers: High electron mobility single-crystalline ZnSnN2 o…
PtSe2 is attracting considerable attention as a high mobility two-dimensional material with envisionned applications in microelectronics, photodetection and spintronics. The growth of high quality PtSe2 on insulating substrates with…
Recently theorized hybrid II-IV-N{_2} / III-N heterostructures, based on current commercialized (In,Ga)N devices, are predicted to significantly advance the design space of highly efficient optoelectronics in the visible spectrum, yet there…
BaZn2As2 is expected for a good p-type semiconductor and has two crystalline phases of an orthorhombic alpha phase and a higher-symmetry tetragonal beta phase. Here, we report high-quality epitaxial films of the tetragonal beta-BaZn2As2…
Group II-IV nitrides have recently emerged as a novel class of semiconductors composed of earth-abundant elements. Owing to their tunable bandgaps, comparable to those of III-nitrides, these materials are attractive candidates for replacing…
We report a synthetic route to achieve high electron mobility at room temperature in epitaxial La:BaSnO$_3$/SrZrO$_3$ heterostructures prepared on several oxide substrates. Room-temperature mobilities of 157, 145, and 143…
We report on the vapor-solid growth of single crystalline few-layer MoS2 films on (0001)-oriented sapphire with excellent structural and electrical properties over centimeter length scale. High-resolution X-ray diffraction scans indicated…
Zinc-based nitride CaZn2N2 films grown by molecular beam epitaxy (MBE) with a plasma-assisted active nitrogen-radical source are promising candidates of next-generation semiconductors for light-emitting diodes and solar cells. This nitride…
To sustainably support the ongoing energetic transition, we need functional metal oxides capable of converting energy, and produce storage, and sensing devices. However, these materials suffer from a high economic cost of manufacturing, and…
We have investigated the initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films prepared by pulsed laser deposition on sapphire (0001) substrates. High-resolution x-ray diffraction and…
Epitaxial, n-type ZnO films grown by a laser molecular-beam epitaxy method were investigated by the temperature-dependent Hall-effect technique. The 300-K carrier concentration and mobility were about $n_s \sim 10^{16}$ cm$^{-3}$ and 440…
We have successfully obtained a ZnO/ZnS heterostructure by heating a ZnS(001) single crystal in a controlled impurities-free oxygen atmosphere. Combining X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM), we explore…
In this paper, the reported experimental data in [Sci. Rep., 2012, 2, 533] related to electrical transport properties in bulk ZnO, ZnMgO/ZnO, and ZnMgO/ZnO/ZnMgO single and double heterostructures were analyzed quantitatively and the most…
Mobility is a key parameter for SnO2, which is extensively studied as a practical transparent oxide n-type semiconductor. In experiments, the mobility of electrons in bulk SnO2 single crystals varies from 70 to 260 cm2V-1s-1 at room…
Two-dimensional (2D) ferromagnetic materials have been exhibiting promising potential in applications, such as spintronics devices. To grow epitaxial magnetic films on silicon substrate, in the single-layer limit, is practically important…
By inserting a SrZrO$_3$ buffer layer between the film and the substrate, we demonstrate a significant reduction of the threading dislocation density with an associated improvement of the electron mobility in La:BaSnO$_3$ films. A room…
Dislocation motion--the atomic-scale mechanism of crystal plasticity--governs the strength and ductility of materials. In functional materials, external stimuli beyond mechanical stress can also affect dislocation glide. In the wide band…
The transparent conducting oxide SnO2 is a wide bandgap semiconductor that is easily n-type doped and widely used in various electronic and optoelectronic applications. Experimental reports of the electron mobility of this material vary…
ZnSnN2 is an Earth-abundant analog to the III-Nitrides with potential as a solar absorber due to its direct bandgap, steep absorption onset, and disorder-driven bandgap tunability. Despite these desirable properties, discrepancies in the…
FeSn is a room-temperature antiferromagnet expected to host Dirac fermions in its electronic structure. The interplay of magnetic degree of freedom and the Dirac fermions makes FeSn an attractive platform for spintronics and electronic…
Single crystals of CaZn2Sb2, EuZn2Sb2, and YbZn2Sb2 were grown from melts of nominal composition AZn5Sb5 (A=Ca,Eu,Yb) with the excess melt being removed at 1073\,K. The electrical transport properties are consistent with those previously…