High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO$_3$/SrZrO$_3$ heterostructures

Arnaud P. Nono Tchiomo; Wolfgang Braun; Bryan P. Doyle; Wilfried Sigle; Peter van Aken; Jochen Mannhart; Prosper Ngabonziza

doi:10.1063/1.5094867

High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO$_3$/SrZrO$_3$ heterostructures

Materials Science 2019-04-30 v2

Authors: Arnaud P. Nono Tchiomo , Wolfgang Braun , Bryan P. Doyle , Wilfried Sigle , Peter van Aken , Jochen Mannhart , Prosper Ngabonziza

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Abstract

By inserting a SrZrO $_3$ buffer layer between the film and the substrate, we demonstrate a significant reduction of the threading dislocation density with an associated improvement of the electron mobility in La:BaSnO $_3$ films. A room temperature mobility of 140 cm $^2$ V $^{-1}\text{s}^{-1}$ is achieved for 25-nm-thick films without any post-growth treatment. The density of threading dislocations is only $4.9\times 10^{9}$ cm $^{-2}$ for buffered films prepared on (110) TbScO $_3$ substrates by pulsed laser deposition.

Keywords

buffer layer electron mobility baSnO3 srZrO3 heterostructure threading dislocation pulsed laser deposition

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@article{arxiv.1903.11645,
  title  = {High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO$_3$/SrZrO$_3$ heterostructures},
  author = {Arnaud P. Nono Tchiomo and Wolfgang Braun and Bryan P. Doyle and Wilfried Sigle and Peter van Aken and Jochen Mannhart and Prosper Ngabonziza},
  journal= {arXiv preprint arXiv:1903.11645},
  year   = {2019}
}

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5 pages, 4 figures

High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO$_3$/SrZrO$_3$ heterostructures

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