Related papers: Design of a waveguide-coupled GeSn disk laser
Germanium-tin (GeSn) photodiodes potentiate a viable solution to integrate SWIR and extended SWIR detection technology into CMOS processing line. However, challenges in the growth of thick, high quality GeSn limit the device absorber…
Miniature semiconductor lasers have attracted a large amount of interest owing to their potential as highly integrated components in photonic circuits or in sensors. Particularly, microdisk lasers exploiting whispering gallery modes have…
Physical models of Ge energy band structure and material loss were implemented in LASTIP(TM), a 2D simulation tool for edge emitting laser diodes. The model calculation is able to match experimental data available. Important design…
Dye-doped hybrid silicate/titanium nanofilms on the glass substrate in the structure of asymmetrical waveguides were studied as the laser system. The spatial and spectral features of laser oscillation of genuine and hollow waveguides were…
Chip-scale, high-energy optical pulse generation is becoming increasingly important as we expand activities into hard to reach areas such as space and deep ocean. Q-switching of the laser cavity is the best known technique for generating…
Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase…
The generation of optical frequency combs via direct electrical pumping of semiconductor lasers is an attractive alternative to the well-established mode-locked laser sources in terms of compactness, robustness and integrability. However,…
The significant progress of GeSn material development has enabled a feasible solution to the long-desired monolithically integrated lasers on the Si platform. While there are many reports focused on optically pumped lasers, GeSn lasers…
Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride on silicon platform with gallium nitride (GaN) as the main waveguiding layer. The photonic circuits consist of a microdisk and a pulley…
Sensitive and cost-effective Group-IV short-wave infrared (SWIR) photodetectors (PDs), compatible with complementary metal-oxide semiconductor (CMOS) processes, are crucial for various emerging applications. Here, we developed a black GeSn…
Silicon-compatible short- and mid-wave infrared emitters are highly sought-after for on-chip monolithic integration of electronic and photonic circuits to serve a myriad of applications in sensing and communication. To address this…
We propose the construction of highly directional emission microlasers using two-dimensional high-index semiconductor waveguides as {\it open} resonators. The prototype waveguide is formed by two collinear leads connected to a cavity of…
GeSn-based avalanche photodiode (APD) operating in shortwave infrared (SWIR) wavelength was demonstrated in this work. A separate absorption and charge multiplication (SACM) structure was employed to take advantage of long wavelength…
An erbium doped micro-laser is demonstrated utilizing $\mathrm{SiO_{2}}$ microdisk resonators on a silicon chip. Passive microdisk resonators exhibit whispering gallery type (WGM) modes with intrinsic optical quality factors of up to…
We characterize a semiconductor external cavity diode laser whose optical feedback is provided by a guided mode resonance filter (GMRF). We focus on the spectral properties. The wavelength of operation falls in the telecom range (1506 nm).…
Visible-spectrum photonic integrated circuits (PICs) present compact and scalable solutions for emerging technologies including quantum computing, biosensing, and virtual/augmented reality. Realizing their full potential requires the…
Even though submicron silicon waveguides have been proposed for dense integration of photonic devices, to date the lightwave circuits on the market mainly rely on waveguides with micron-scale core dimensions. These larger waveguides feature…
A GaN resonant cavity light emitting diode was built on a GaN-AlN distributed Bragg reflector grown on a silicon substrate. The electroluminescence output increased by 2.5 times for a GaN diode coupled to a properly designed resonant…
We demonstrate optically coupled nanomechanical resonators fabricated on silicon-on-insulator. Silicon fin waveguides are used to control the dispersion of mechanical waves and engineer localized resonances by modulation of the fin…
Van der Waals heterostructures assembled from two-dimensional materials offer a promising platform to engineer structures with desired optoelectronic characteristics. Here we use waveguide-coupled disk resonators made of hexagonal boron…