Related papers: Design of a waveguide-coupled GeSn disk laser
Efficient coupling between on-chip sources and cavities plays a key role in silicon photonics. However, despite the importance of this basic functionality, there are few systematic design tools to simultaneously control coupling between…
Recently, there has been a growing interest in integrated THz photonics for various applications in communications, spectroscopy and sensing. We present a new integrated photonic platform based on active and passive elements integrated in a…
Short-wave infrared (SWIR) imaging arrays have demonstrated great potential in applications spanning from military to civilian consumer electronics. However, the current focal plane arrays (FPAs), which are based on compound semiconductors,…
Ultrahigh repetition rate lasers will become vital light sources for many future technologies; however, their realization is challenging because the cavity size must be minimized. Whispering-gallery-mode (WGM) microresonators are attractive…
Metallic nanoparticle-on-a-mirror (NPoM) cavities enable extreme field confinement in sub-nm gaps, leading to unrivaled performance for nonlinear processes such as surface-enhanced Raman scattering (SERS). So far, prevailing experimental…
GeSn alloys are metastable semiconductors that have been proposed as building blocks for silicon-integrated short-wave and mid-wave infrared photonic and sensing platforms. Exploiting these semiconductors requires, however, the control of…
Reliable control of quantum information in matter-based qubits requires precisely applied external fields, and unaccounted for spatial cross-talk of these fields between adjacent qubits leads to loss of fidelity. We report a CMOS…
We present the design, fabrication, and optical characterization of ultra-compact mid-wave infrared photodetector pixels. Our design relies on a guided mode resonance structure to confine incident mid-infrared light to the 250 nm-thick…
Active wavelength-scale optoelectronic components are widely used in photonic integrated circuitry, however coherent sources of light -- namely optical lasers -- remain the most challenging component to integrate. Semiconductor nanowire…
Semiconductor heterojunctions are foundational to many advanced electronic and optoelectronic devices. However, achieving high-quality, lattice-mismatched interfaces remains challenging, limiting both scalability and device performance.…
The optimization of laser resonators represents a crucial issue for the design of terahertz semiconductor lasers with high gain and low absorption loss. In this paper, we put forward and optimize the surface plasmonic metal waveguide…
InGaN-based active layers within microcavity resonators offer the potential of low threshold lasers in the blue spectral range. Here we demonstrate optically pumped, room temperature lasing in high quality factor GaN microdisk cavities…
A photodiode with 0.55$\pm$0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in…
We report on a design of a compact laser system composed of an extended cavity diode laser with high passive stability and a pre-filter Fabri-Perot cavity. The laser is frequency stabilized relative to the cavity using a serrodyne technique…
Optical interconnects are the most promising solution to address the data-movement bottleneck in data centers. Silicon microdisks, benefiting from their compact footprint, low energy consumption, and wavelength division multiplexing (WDM)…
Here we propose a waveguide-integrated germanium plasmonic photodetector that is based on a long-range dielectric-loaded surface plasmon polariton waveguide configuration. As this configuration ensures a long propagation distance, i.e.,…
High-efficiency micro-light-emitting diodes (Micro-LEDs) are key devices for next-generation display technology. However, when the mesa size is reduced to around tens of micrometers or less, the luminous efficiency is constrained by the…
Silicon nitride (Si3N4), as a complementary metal-oxide-semiconductor (CMOS) material, finds wide use in modern integrated circuit (IC) technology. The past decade has witnessed tremendous development of Si3N4 in photonic areas, with…
High confinement, integrated silicon nitride (SiN) waveguides have recently emerged as attractive platform for on-chip nonlinear optical devices. The fabrication of high-Q SiN microresonators with anomalous group velocity dispersion (GVD)…
Integrated optical devices able to control light matter interactions on the nanoscale have attracted the attention of the scientific community in recent years. However, most of these devices are based on silicon waveguides, limiting their…