Related papers: Temperature overshoot as the cause of physical cha…
Some correlated materials display an insulator-to-metal transition as the temperature is increased. In most cases this transition can also be induced electrically, resulting in volatile resistive switching due to the formation of a…
The nature of the conducting filaments in many resistive switching systems has been elusive. Through in situ transmission electron microscopy, we image the real-time formation and evolution of the filament in a silicon oxide resistive…
Strongly correlated insulators, such as Mott or charge-transfer insulators, exhibit a strong temperature dependence in their resistivity. Consequently, self-heating effects can lead to electrothermal instabilities in planar thin film…
We investigate the polarity-dependent field-induced resistive switching phenomenon driven by electric pulses in perovskite oxides. Our data show that the switching is a common occurrence restricted to an interfacial layer between a…
We investigate the dramatic switch of resistance in ordered correlated insulators, when driven out of equilibrium by a strong voltage bias. Microscopic calculations on a driven-dissipative lattice of interacting electrons explain the main…
A critical issue affecting filamentary resistive random access memory (RRAM) cells is the requirement of high voltages during electroforming. Reducing the magnitude of these voltages is of significant interest, as it ensures compatibility…
A phase field method self-consistently coupled to continuum heat transport and charge conservation is used to simulate conducting filament dynamical evolution and nanostructure of electroformed resistive switching thin films. Our method…
Electroforming is used to initiate the memristive response in metal/oxide/metal devices by creating a filamentary conduction path in the oxide film. Here we use a simple photoresist-based detection technique to map the spatial distribution…
We performed a computational analysis on percolation transport and filament formation in amorphous $Ge_2Sb_2Te_5$ (a-GST) using 2D finite-element multi-physics simulations with 2 nm out-of-plane depth using an electric-field and temperature…
Neuromorphic functionalities in memristive devices are commonly associated with the ability to electrically create local conductive pathways by resistive switching. The archetypal correlated material, VO2, has been intensively studied for…
The effects of the discharge voltage on the formation and nature of electric field transients in a symmetric, collisionless, very high frequency, capacitively coupled plasma are studied using a self-consistent particle-in-cell (PIC)…
While it is well established that elevated temperatures can induce surface roughening of metal surfaces, the effect of a high electric field on the atomic structure at ambient temperature has not been investigated in detail. Here we show…
We report the detailed current-voltage (I-V) characteristics of resistance switching in NiO thin films. In unipolar resistance switching, it is commonly believed that conducting filaments will rupture when NiO changes from a low resistance…
Critical temperature regions for resistive switching were found based on HfAlO resistive switching memory. From 5 K to 300 K, the resistive switching appears at 60 K, and then a reversible bipolar switching between the two states is…
Here we report a structural phase transition and its possible competition with superconductivity in the suboxide La$_5$Pb$_3$O. Upon cooling through $T_t$ = 225 K, La$_5$Pb$_3$O transforms from a high-temperature I4/mcm to a low-temperature…
We report on resistive switching of memristive electrochemical metallization devices using 3D kinetic Monte Carlo simulations describing the transport of ions through a solid state electrolyte of an Ag/TiO$_{\text{x}}$/Pt thin layer system.…
Resistive-switching -- the current-/voltage-induced electrical resistance change -- is at the core of memristive devices, which play an essential role in the emerging field of neuromorphic computing. This study is about resistive switching…
A simple means of detecting and spatially mapping volatile and nonvolatile conductive filaments in metal/oxide/metal cross-point devices is introduced and its application demonstrated. The technique is based on thermal discolouration of a…
Memory devices based on resistive switching (RS) have not been fully realised due to lack of understanding of the underlying switching mechanisms. Nature of ion transport responsible for switching and growth of conducting filament in…
We introduce a model that accounts for the bipolar resistive switching phenomenom observed in transition metal oxides. It qualitatively describes the electric field-enhanced migration of oxygen vacancies at the nano-scale. The numerical…