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We describe critical processing issues in our development of single atom devices for solid-state quantum information processing. Integration of single 31P atoms with control gates and single electron transistor (SET) readout structures is…
Charge or spin-qubits can be realized by using gate-defined quantum dots (QDs) in semiconductors in a similar fashion to the processes used in CMOS for conventional field-effect transistors or more recent fin FET technology. However, to…
We have developed a technique that dramatically reduces the contact resistances and depletes a shunting channel between the contacts outside the Hall bar in ultra-high mobility SiGe/Si/SiGe heterostructures. It involves the creation of…
Quantum computation requires qubits that satisfy often-conflicting criteria, including scalable control and long-lasting coherence. One approach to creating a suitable qubit is to operate in an encoded subspace of several physical qubits.…
We propose and demonstrate a relaxed-SiGe/strained-Si (SiGe/s-Si) enhancement-mode gate stack for quantum dots. The enhancement-mode SiGe/s-Si structure is pursued because it spaces the quantum dot away from charge and spin defect rich…
Scalable fault-tolerant quantum computer architectures require quantum gates that operate within a small fraction of the qubit decoherence time and with high accuracy over a bandwidth set by the decoherence rate. Electron spin quantum bits…
We have developed a quantum annealing processor, based on an array of tunably coupled rf-SQUID flux qubits, fabricated in a superconducting integrated circuit process [1]. Implementing this type of processor at a scale of 512 qubits and…
High-fidelity quantum gates are a cornerstone of any quantum computing and communications architecture. Realizing such control in the presence of realistic errors at the level required for beyond-threshold quantum error correction is a…
Spin qubits in silicon quantum dots are one of the most promising building blocks for large scale quantum computers thanks to their high qubit density and compatibility with the existing semiconductor technologies. High fidelity…
We systematically investigate the interplay between materials engineering, quantum transport, and low-frequency charge noise in silicon metal--oxide--semiconductor (SiMOS) quantum devices. By combining Hall-bar transport measurements with…
Three-level Lambda systems appear in various quantum information processing platforms. In several control schemes, the excited level serves as an auxiliary state for implementing gate operations between the lower qubit states. However,…
Executing quantum circuits on superconducting platforms requires balancing the trade-off between gate errors and crosstalk. To address this, we introduce SurgeQ, a hardware-software co-design strategy consisting of a design phase and an…
We propose a new structure suitable for quantum computing in a solid state environment: designed defect states in antidot lattices superimposed on a two-dimensional electron gas at a semiconductor heterostructure. State manipulation can be…
We report on the fabrication and characterization of quantum dot devices in a Schottky-gated silicon/silicon-germanium two-dimensional electron gas (2DEG). The dots are confined laterally inside an etch-defined channel, while their…
We present a dry surface treatment combining atomic layer etching and deposition (ALE and ALD) to mitigate dielectric loss in fully fabricated superconducting quantum devices formed from aluminum thin films on silicon. The treatment,…
The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent…
Owing to the maturity of complementary metal oxide semiconductor (CMOS) microelectronics, qubits realized with spins in silicon quantum dots (QDs) are considered among the most promising technologies for building scalable quantum computers.…
We present an electrostatically defined few-electron double quantum dot (QD) realized in a molecular beam epitaxy grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well as pulsed-gate measurements are…
We use a nonperturbative extended contractor renormalization (ENCORE) method for engineering quantum devices for the implementation of topologically protected quantum bits described by an effective quantum dimer model on the triangular…
Overcoming the influence of noise and imperfections in quantum devices is one of the main challenges for viable quantum applications. In this article, we present different protocols, which we denote as "superposed quantum error mitigation",…